On the size dependence of melting parameters for silicon


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Using the dependences of melting point Tm and crystallization point Tc on the number of atoms (N) in a spherical silicon crystal that were calculated elsewhere [6] by the method of molecular dynamics, (i) the number of atoms at which the latent heat of the solid–liquid phase transition disappears and (ii) temperature T0 = Tm(N0) = Tc(N0) below which solidifying nanoclusters remain noncrystalline are estimated. These values are found to be N0 = 22.8156 and T0 = 400.851 K. The N dependences for silicon melting parameters, namely, a jump of entropy of melting, latent melting heat, slope of the melting line, and jumps in the surface energy and volume, are derived.

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M. Magomedov

Institute of Geothermal Problems

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Email: mahmag4@mail.ru
俄罗斯联邦, ul. Chamilia 39a, Makhachkala, Dagestan, 367030

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