电邮这篇文章 InAsSbP Photodiodes for 2.6–2.8-μm Wavelengths
- 作者: Il’inskaya N.D.1, Karandashev S.A.1, Lavrov A.A.1,2, Matveev B.A.1, Remennyi M.A.1, Stus’ N.M.1,2, Usikova A.A.1
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隶属关系:
- Ioffe Institute
- OOO IoffeLED
- 期: 卷 63, 编号 2 (2018)
- 页面: 226-229
- 栏目: Solid State Electronics
- URL: https://journal-vniispk.ru/1063-7842/article/view/200727
- DOI: https://doi.org/10.1134/S1063784218020172
- ID: 200727
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详细
Research data for photovoltaic, I–V, and C–V characteristics of InAsSbP/InAs heterostructure photodiodes that operate at room temperature in the wavelength range 2.6–2.8 μm have been reported. Based on these data and available publications, conclusions have been drawn about the prospects for using these photodiodes in a number of applications.
作者简介
N. Il’inskaya
Ioffe Institute
Email: ioffeled@mail.ru
俄罗斯联邦, Politekhnicheskaya ul. 26, St. Petersburg, 194021
S. Karandashev
Ioffe Institute
Email: ioffeled@mail.ru
俄罗斯联邦, Politekhnicheskaya ul. 26, St. Petersburg, 194021
A. Lavrov
Ioffe Institute; OOO IoffeLED
Email: ioffeled@mail.ru
俄罗斯联邦, Politekhnicheskaya ul. 26, St. Petersburg, 194021; Politekhnicheskaya ul. 26, St. Petersburg, 194021
B. Matveev
Ioffe Institute
编辑信件的主要联系方式.
Email: ioffeled@mail.ru
俄罗斯联邦, Politekhnicheskaya ul. 26, St. Petersburg, 194021
M. Remennyi
Ioffe Institute
Email: ioffeled@mail.ru
俄罗斯联邦, Politekhnicheskaya ul. 26, St. Petersburg, 194021
N. Stus’
Ioffe Institute; OOO IoffeLED
Email: ioffeled@mail.ru
俄罗斯联邦, Politekhnicheskaya ul. 26, St. Petersburg, 194021; Politekhnicheskaya ul. 26, St. Petersburg, 194021
A. Usikova
Ioffe Institute
Email: ioffeled@mail.ru
俄罗斯联邦, Politekhnicheskaya ul. 26, St. Petersburg, 194021
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