Enviar artigo por via de e-mail InAsSbP Photodiodes for 2.6–2.8-μm Wavelengths
- Autores: Il’inskaya N.D.1, Karandashev S.A.1, Lavrov A.A.1,2, Matveev B.A.1, Remennyi M.A.1, Stus’ N.M.1,2, Usikova A.A.1
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Afiliações:
- Ioffe Institute
- OOO IoffeLED
- Edição: Volume 63, Nº 2 (2018)
- Páginas: 226-229
- Seção: Solid State Electronics
- URL: https://journal-vniispk.ru/1063-7842/article/view/200727
- DOI: https://doi.org/10.1134/S1063784218020172
- ID: 200727
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Resumo
Research data for photovoltaic, I–V, and C–V characteristics of InAsSbP/InAs heterostructure photodiodes that operate at room temperature in the wavelength range 2.6–2.8 μm have been reported. Based on these data and available publications, conclusions have been drawn about the prospects for using these photodiodes in a number of applications.
Sobre autores
N. Il’inskaya
Ioffe Institute
Email: ioffeled@mail.ru
Rússia, Politekhnicheskaya ul. 26, St. Petersburg, 194021
S. Karandashev
Ioffe Institute
Email: ioffeled@mail.ru
Rússia, Politekhnicheskaya ul. 26, St. Petersburg, 194021
A. Lavrov
Ioffe Institute; OOO IoffeLED
Email: ioffeled@mail.ru
Rússia, Politekhnicheskaya ul. 26, St. Petersburg, 194021; Politekhnicheskaya ul. 26, St. Petersburg, 194021
B. Matveev
Ioffe Institute
Autor responsável pela correspondência
Email: ioffeled@mail.ru
Rússia, Politekhnicheskaya ul. 26, St. Petersburg, 194021
M. Remennyi
Ioffe Institute
Email: ioffeled@mail.ru
Rússia, Politekhnicheskaya ul. 26, St. Petersburg, 194021
N. Stus’
Ioffe Institute; OOO IoffeLED
Email: ioffeled@mail.ru
Rússia, Politekhnicheskaya ul. 26, St. Petersburg, 194021; Politekhnicheskaya ul. 26, St. Petersburg, 194021
A. Usikova
Ioffe Institute
Email: ioffeled@mail.ru
Rússia, Politekhnicheskaya ul. 26, St. Petersburg, 194021
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