The effect of working gas pressure on the switching rate of a kivotron
- 作者: Bokhan P.A.1, Gugin P.P.1, Zakrevsky D.E.1, Lavrukhin M.A.1
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- 期: 卷 42, 编号 5 (2016)
- 页面: 451-455
- 栏目: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/198954
- DOI: https://doi.org/10.1134/S1063785016050047
- ID: 198954
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详细
The switching rate in gas-discharge devices (kivotrons) based on an “open” discharge with counterpropagating electron beams is studied experimentally. Structures with a total cathode area of 2 cm2 were used. A monotonic reduction in the switching time with an increase in the working gas pressure and in the voltage amplitude at the time of breakdown is demonstrated. The minimum switching time is ~240 ps at a voltage of 17 kV. The maximum current rise rate, which is limited by the discharge circuit inductance, is 3 × 1012 A/s.
作者简介
P. Bokhan
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: zakrdm@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
P. Gugin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: zakrdm@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
D. Zakrevsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch
编辑信件的主要联系方式.
Email: zakrdm@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
M. Lavrukhin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: zakrdm@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
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