X-Ray Diffraction Analysis of Epitaxial Layers with the Properties of a Dislocation Filter

I. D. Loshkarev; A. P. Vasilenko; E. M. Trukhanov; A. V. Kolesnikov; M. O. Petrushkov; M. A. Putyato

doi:10.1134/S106378501807009X

X-Ray Diffraction Analysis of Epitaxial Layers with the Properties of a Dislocation Filter

作者: Loshkarev I.D.¹, Vasilenko A.P.¹, Trukhanov E.M.¹, Kolesnikov A.V.¹, Petrushkov M.O.¹, Putyato M.A.¹
隶属关系:
1. Rzhanov Institute of Semiconductor Physics, Siberian Branch
期: 卷 44, 编号 7 (2018)
页面: 562-565
栏目: Article
URL: https://journal-vniispk.ru/1063-7850/article/view/207769
DOI: https://doi.org/10.1134/S106378501807009X
ID: 207769

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An approach to instant testing of epitaxial films with a sharp decrease in the threading dislocation density is proposed. High-resolution X-ray diffractometry, including reciprocal space mapping, has been used. The structure of GaAs/Si(001) heterosystems with low-temperature GaAs layers has been analyzed. A decrease in the density of threading dislocations in the GaAs film with the formation of a small-angle boundary has been detected.