X-Ray Diffraction Analysis of Epitaxial Layers with the Properties of a Dislocation Filter

I. D. Loshkarev; A. P. Vasilenko; E. M. Trukhanov; A. V. Kolesnikov; M. O. Petrushkov; M. A. Putyato

doi:10.1134/S106378501807009X

X-Ray Diffraction Analysis of Epitaxial Layers with the Properties of a Dislocation Filter

Авторлар: Loshkarev I.D.¹, Vasilenko A.P.¹, Trukhanov E.M.¹, Kolesnikov A.V.¹, Petrushkov M.O.¹, Putyato M.A.¹
Мекемелер:
1. Rzhanov Institute of Semiconductor Physics, Siberian Branch
Шығарылым: Том 44, № 7 (2018)
Беттер: 562-565
Бөлім: Article
URL: https://journal-vniispk.ru/1063-7850/article/view/207769
DOI: https://doi.org/10.1134/S106378501807009X
ID: 207769

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат
Рұқсат жабық

Рұқсат берілді
Рұқсат жабық

Тек жазылушылар үшін

Аннотация
Авторлар туралы
Әдебиет тізімі
Қосымша файлдар
Статистика

Аннотация

An approach to instant testing of epitaxial films with a sharp decrease in the threading dislocation density is proposed. High-resolution X-ray diffractometry, including reciprocal space mapping, has been used. The structure of GaAs/Si(001) heterosystems with low-temperature GaAs layers has been analyzed. A decrease in the density of threading dislocations in the GaAs film with the formation of a small-angle boundary has been detected.