Synthesis by Molecular Beam Epitaxy and Properties of InGaN Nanostructures of Branched Morphology on a Silicon Substrate


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Abstract

The principal possibility of synthesis of InGaN nanostructures of branched morphology (“nanoflowers”) by molecular beam epitaxy on the surface of a silicon substrate has been demonstrated. The results of morphological studies have shown that the development of the morphology of InGaN nanostructures occurs in several stages even when maintaining a constant substrate temperature. The grown structures exhibit a photoluminescence line in a wide wavelength range from 450 to 950 nm at room temperature.

About the authors

R. R. Reznik

ITMO University

Author for correspondence.
Email: moment92@mail.ru
Russian Federation, St. Petersburg

K. P. Kotlyar

St. Petersburg Academic University, Russian Academy of Sciences

Email: moment92@mail.ru
Russian Federation, St. Petersburg

N. V. Kryzhanovskaya

St. Petersburg Academic University, Russian Academy of Sciences

Email: moment92@mail.ru
Russian Federation, St. Petersburg

S. V. Morozov

Institute for Physics of Microstructures, Russian Academy of Sciences; Lobachevsky State University of Nizhny Novgorod

Email: moment92@mail.ru
Russian Federation, Nizhny Novgorod; Nizhny Novgorod

G. E. Cirlin

ITMO University; St. Petersburg Academic University, Russian Academy of Sciences; Institute for Analytical Instrumentation of the Russian Academy of Sciences; Peter the Great St. Petersburg Polytechnic University; St. Petersburg Electrotechnical University “LETI”

Email: moment92@mail.ru
Russian Federation, St. Petersburg; St. Petersburg; St. Petersburg; St. Petersburg; St. Petersburg

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