


Vol 45, No 11 (2019)
- Year: 2019
- Articles: 27
- URL: https://journal-vniispk.ru/1063-7850/issue/view/12917
Article
The Effect of the Doping Level of Starting Silicon Single Crystals on Structural Parameters of Porous Silicon Produced by Electrochemical Etching
Abstract
The effect of comparatively small changes in the free carrier concentration in a heavily doped p‑type single-crystal silicon on the structural parameters of porous layers formed as a result of its anodic etching has been found. The pronounced influence exerted by the hole concentration on the structural porous silicon parameters being studied is explained on the basis of the concept of electrochemical pore-formation in silicon crystals as a self-organized cooperative process accompanied by the injection of electrons from the region of the chemical reaction at the propagation front of pores.



Effect of the Channel Inclination Angle on Convective Mixing Caused by Instability of Mechanical Equilibrium of Ternary Gas Mixture at Isothermal Diffusion
Abstract
The peculiarities of a convective regime aroused due to instability of mechanical equilibrium of a ternary helium–argon–nitrogen gas mixture at isothermal diffusion are experimentally investigated. The effect of the inclination angle of diffusion channel on the intensity of convective flows is considered. The intensity of the partial transport of components in the inclined channel was measured at increased pressures. The nonlinear dependence of the mixing rate of components on the inclination angle is discovered. It is established that the observed transport of components atypical for diffusion is possible at a certain composition of the gas mixture.



Epitaxial Growth of Zinc Sulfide by Atomic Layer Deposition on SiC/Si Hybrid Substrates
Abstract
Epitaxial films of zinc sulfide on silicon were obtained by atomic layer deposition (ALD). In order to avoid the interaction between silicon and zinc sulfide, a high-quality buffer layer of silicon carbide ~100 nm in thickness was previously synthesized on the surface of silicon by chemical substitution of atoms. High-energy electron diffraction showed that ZnS layers are epitaxial. It is proved by ellipsometric methods that the grown ZnS layers are transparent in the photon energy region up to 3 eV, which is crucial for applications in optoelectronics.



Optically Induced Effects in Irradiated Ultrafine Al2O3–BeO Ceramics
Abstract
We studied optically induced effects in ultrafine Al2O3–BeO ceramics irradiated with a high-dose pulsed electron beam (130 keV). Upon optical excitation of ceramics at 470 nm, optically stimulated luminescence is observed due to the depletion of traps associated with thermoluminescence peaks at 380 and 530 K. These traps are characterized by a complex energy spectrum with a nonuniformly distributed photoionization cross section. The prospects of using optically stimulated luminescence of Al2O3–BeO ceramics in high-dose dosimetry (3–30 kGy) have been proved.



An Experimental Study of a Passive Method of Attenuating a Transonic Buffet Phenomenon
Abstract
The results of experimental studies of the physical pattern of the appearance of the buffet phenomenon at transonic speeds for a model supercritical profile are presented. A passive way of controlling this phenomenon is proposed that is connected with the organization of special jet vortex generators. It is experimentally found that the proposed approach leads to a delay in the appearance and weakening of the transonic buffet and, as a result, to an improvement in the aerodynamic characteristics of the profile.



Structural Analysis of Nanoparticles Formed via Laser Ablation of Porous Silicon and Silicon Microparticles in Water
Abstract
Silicon nanoparticles with sizes of 50–300 nm have been formed via picosecond laser ablation of porous silicon and silicon microparticles in water using various targets. Raman spectroscopy has revealed the presence of a low amount of the amorphous phase in the obtained particles (10–12%) prepared from micro- and mesoporous silicon layers and almost a zero degree of crystallinity in the case of laser fragmentation of silicon micropowders in water. The results are promising for further application of the nanoparticles in photonics and biomedicine.



The Formation of Broadband Color Centers in PMMA by Femtosecond Laser Radiation
Abstract
At present, organic materials modified by the laser irradiation are frequently used for the development and production of optical elements. Poly(methyl methacrylate) (PMMA) is one of the polymer materials which are most widely used in optics and optoelectronics. A broad transparency window and the ease of industrial processing are the main advantages of PMMA. Laser modification of PMMA allows creating color centers with radiation in a wide spectral range.



InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics
Abstract
A high-electron-mobility transistor (HEMT) based on InAlAs/InGaAs/InP heterostructures possessing higher breakdown characteristics is developed. An InGaAs composite channel structure, combined with completely selective forming of the double recess structure, is used in the devices. HEMTs with a T‑shaped gate 120 nm in length consist of four fingers, each 30 μm in width, exhibit a maximum transconductance of 810 mS/mm, 460-mA/mm maximum density of drain current and 8- to 10-V drain-to-gate breackdown voltage. The current-amplification cut-off frequency of transistors is over 115 GHz. Due to the enhanced breakdown voltage and the forming of a double recess structure by selective etching, the elaborated transistors are promising for application in the monolithic integrated circuits of the millimeter-wave medium power amplifiers.



A Study of the Photoluminescence Spectra of AgInS2/ZnS Nanocrystals under γ-Irradiation
Abstract
The influence of different doses of γ-radiation from a 137Cs source on photoluminescence of nanocrystals of the Ag–In–S system with a shell of wider-gap ZnS semiconductor and without it has been investigated. The dynamics of change in the nanocrystal photoluminescence depending on the γ-irradiation dose is presented. It is established that nanoparticles of the AgInS2/ZnS system retain their photoluminescence properties and colloidal stability at the absorbed dose up to 6 × 103 Gy (with respect to water). The residual photoluminescence is retained until the absorbed dose is 106 Gy (with respect to H2O). It is shown that AgInS2/ZnS nanocrystals can be used in medical and biological studies, which call for enhanced resistance to γ-radiation.



Anomalies in Photovoltaic Characteristics of Multijunction Solar Cells at Ultrahigh Solar Light Concentrations
Abstract
An anomaly appearing in the photovoltaic characteristics of triple-junction GaInP/GaAs/Ge and of the corresponding double-junction GaInP/GaAs solar cells at ultrahigh concentrations (more than 2000 suns) of incident light has been studied. The light current–voltage characteristics at various concentration ratios of incident light and the dependence of the open-circuit voltage on the photogenerated current were analyzed. It was shown that the anomaly is observed due to the tunnel diode connected back-to-back between the GaInP and GaAs subcells. This diode absorbs photons that pass across the GaInP layers and creates a counter photovoltage.



Poly-para-xylylene-Based Memristors on Flexible Substrates
Abstract
Flexible memristive structures based on poly-para-xylelene layers, which exhibit stable resistive switchings and are resistant to bendings with radii up to 10 mm, have been prepared and studied. A two-step scheme of setting the resistive state of the memristive structure is proposed, which is based on monitoring the compliance current passing through the structure. The results obtained allow memristive structures based on poly-para-xylelene layers to be used for neuromorphic computational systems and biocompatible “wearable” electronics.



Application of the Multifrequency Doppler Backscattering Method for Studying Alfvén Modes at a Tokamak
Abstract
The results of a study of toroidal Alfvén modes using the multifrequency method of Doppler backscattering at the Globus-M tokamak have been presented. The method for recording Alfvén modes in multichannel probing has been introduced. The possible causes of the observed oscillations of the poloidal velocity of plasma rotation at the frequencies of Alfvén waves have been discussed in detail. The data on the spatial distribution of Alfvén modes have been presented. The recommendations for further development of Doppler backscattering for a more detailed study of toroidal Alfvén modes at tokamaks have been defined.



Synthesis by Molecular Beam Epitaxy and Properties of InGaN Nanostructures of Branched Morphology on a Silicon Substrate
Abstract
The principal possibility of synthesis of InGaN nanostructures of branched morphology (“nanoflowers”) by molecular beam epitaxy on the surface of a silicon substrate has been demonstrated. The results of morphological studies have shown that the development of the morphology of InGaN nanostructures occurs in several stages even when maintaining a constant substrate temperature. The grown structures exhibit a photoluminescence line in a wide wavelength range from 450 to 950 nm at room temperature.



Microhardness and Crack Resistance of Gallium Oxide
Abstract
The microhardness and crack resistance of two main gallium oxide polytypes: metastable α-Ga2O3 with a corundum structure and β-Ga2O3 (high-temperature phase) with a monoclinic crystal structure, have been studied using a Vickers method of diamond pyramid indentation. As far as we know, this is the first attempt to compare the mechanical properties of the two polytypes of gallium oxide.



The Influence of a Flow of Low-Temperature Nitrogen Plasma on the Morphology, Electric Properties, and UV Photoconductivity of ZnO Films on Sapphire
Abstract
We have studied the influence of a flow of high-enthalpy nitrogen plasma generated by a dc plasmatron on the morphology, electrical properties, and UV photoconductivity of ZnO films on sapphire substrates. It was found that the resistance of nitrogen-plasma-treated ZnO films increased (by a maximum factor of 104) and the processed films exhibited clearly pronounced response to UV irradiation. The UV responsivity of current and the current pulse contrast at 6 V were on a level of 3.6 × 10–5 A/W and 16, respectively. The photocurrent pulse rise and decay times were ~0.45 s.



The Influence of the Voltage Rise Time on Transient Processes during Current Overload in Stabilized Second-Generation HTSC Wires
Abstract
The effect of spontaneous reverse transition of a stabilized high-temperature superconductor (HTSC) tape from the normal to resistive state during rapid (jumplike) voltage application and alternating current overload has been observed. It is established for the first time that, at a stabilizing layer thickness above 13 μm, the main heat evolution takes place in the copper stabilizer and this heat is effectively removed to the refrigerant, which significantly decreases the HTSC layer’s overheating. This is accompanied by a drop in the resistance of the secondary resistive state and increase in the duration of its existence. These data allow using the observed effect to increase the time of current limitation and improving reliability of HTSC current limiters.



Studying the Grain Structure of SmS Targets Manufactured under Variable Conditions
Abstract
The grain structure of samarium sulfide (SmS) targets manufactured by pressing with or without subsequent high-temperature treatment by high-frequency current (HFC) at various pressures has been studied. The density of samples manufactured in various regimes was determined and the optimum technological conditions for obtaining high-quality SMS targets were selected. In particular, the HFC annealing upon pressing at 5 t/cm2 proved to be more effective than the analogous treatment at 4 t/cm2. It is established that the samples obtained by pressing at 5 t/cm2 without high-temperature HFC annealing contain significant amounts of unbound metallic samarium.



Electrochemical Amorphization As a Method to Increase the Rate Capability of Crystalline Silicon Anodes for Lithium-Ion Batteries
Abstract
Anodes manufactured from macroporous silicon have been studied. Galvanostatic cycling tests in half-cells with Li counterelectrode in a regime of charging capacity limited to Q1 = 1000 mAh/g showed that the inclusion of a modifying cycle with increased time of electrochemical lithiation into the testing schedule allowed the charge/discharge rate to be increased upon return to the initial regime. The results are interpreted in terms of a two-phase model with a sharp a-LixSi/c-Si interface. The insertion of a large amount of lithium during the modifying cycle leads to an increase in the thickness of an amorphous layer, within which the insertion and extraction of lithium in subsequent cycles proceed at a higher rate.



Spectral Shift of Quantum-Cascade Laser Emission under the Action of Control Voltage
Abstract
Spectral redistribution of the intensity of short- and long-wavelength emission components within gain bandwidth of a 7- to 8-μm quantum-cascade laser under the action of control voltage is demonstrated. As the voltage was increased from 10.5 to 18.2 V, the wavelength of maximum laser emission intensity shifted by approximately 200 nm. The maximum bandwidth of laser gain was about 300 nm (at a temperature of 80 K). The quantum-cascade laser heterostructure was grown by molecular beam epitaxy. The laser active region design was based on double-phonon depopulation of the lower level as implemented on In0.53Ga0.47As/In0.52Al0.48As heteropair of solid alloys lattice-matched with an InP substrate.



The Development of Segmentation Algorithms in Holographic Microscopy and Tomography for Determination of Morphological Parameters of Cells
Abstract
Algorithms of cell segmentation on two-dimensional phase images and three-dimensional distributions of a refractive index obtained by means of digital holographic microscopy and tomography are developed. The proposed algorithms are optimized for determining cell morphology characteristics including the cell volume, projection area, and surface area. A comparative analysis of the error of cell volume determination by holographic methods using the proposed cell segmentation algorithms and the standard method of confocal fluorescence microscopy has been performed.



An Unusual Mechanism of Misfit Stress Relaxation in Thin Nanofilms
Abstract
A new mechanism of misfit stress relaxation in nanofilms with variable density of surface phases is established. This phenomenon is ensured by ordered mass transfer of atoms from the strained atomic layer. The 7 × 7 → 5 × 5 phase transition in a Ge film on Si(111) substrate involves partial compensation of compressive stresses in the interface between volume (bulk) crystal and superstructure by means of tensile straining of loose layers of the surface phase.



Studying the Flow Structure in a Promising Vortex Furnace
Abstract
The internal aerodynamics of an isothermal laboratory model of a modified four-vortex furnace for a pulverized coal boiler have been experimentally studied. The digital tracer imaging (particle image velocimetry) technique was used to determine average flow velocity distributions and streamline projections in several sections of the model in various regimes of furnace operation determined by the velocity ratio of flows supplied via primary (main) and secondary nozzles. Conditions for the formation of a stable flow structure with four symmetric conjugated vortices in the entire volume of the furnace, as well as the domain of parameters leading to a nonregular spatial vortex structure, were determined.



Magnetostriction via Magnetoelectricity: Using Magnetoelectric Response to Determine the Magnetostriction Characteristics of Composite Multiferroics
Abstract
We propose a new method for determining the magnetostriction characteristics of composite multiferroics by measuring the magnetoelectric (ME) response of the material structure. It is established that the integral characteristic of the ME effect coincides to within a constant factor with the magnetostriction curve. The results of an experimental investigation of the physical properties of volume composites based on lead zirconate titanate (PZT) and nickel ferrite spinel are presented. The field dependence of the ME voltage coefficient was used to determine magnetostriction curves of composite structures containing 10–70 wt % ferrospinel.



Impact and “Delayed” Surface Damage to ZnS–CVD Ceramics
Abstract
Point damage to the surface of ZnS ceramics synthesized by chemical vapor deposition (CVD) was produced by means of either a sharp striker impact or slow indentation of a Vickers pyramid and monitored by measuring time series of strain-induced acoustic emission response. In the case of impact, the duration of acoustic emission was 0.3–0.5 ms, while the indentation was accompanied by a 3- to 5‑ms-long initial active phase of emission followed by the generation of weak sporadic signals over a time period of 80–100 ms. Statistical analysis of the recorded time series showed that the energy distribution in impact-induced acoustic pulses was always random (Poisson’s type), while the signals induced by indenter penetration obeyed a power law of the Gutenberg–Richter type. The different characters of energy release observed for the two types of load application are explained by specific features of the temporal regime of self-organized dislocations, the accumulations of which acted as the centers of microcrack nucleation.



Dynamical Chaos in a Nonlinear System with 1/f Spectrum
Abstract
A system of two nonlinear differential equations proposed for explaining the physical nature of the 1/f spectra reveals the chaotization of trajectories under periodic external action in one of the system equations. This external noise leads to a stochastic resonance and low-frequency 1/f behavior of the power spectra. The stochastic resonance and 1/f behavior correspond to the maximum of information entropy, which is evidence of stability of the random process.



The Influence of Heat Treatment on the Elastic and Microplastic Properties of Ultrafine-Grained Titanium with Variable Content of Impurities
Abstract
Results of investigations of the influence of heat treatment at elevated temperatures on the elastic and microplastic properties of ultrafine-grained (UFG) titanium processed by severe plastic deformation are discussed. The samples were prepared from various batches of α-titanium (VT1-0, Grade 4, and PT3-V) with different initial polycrystalline structures and impurity compositions. Experiments showed that significant changes in the structure (grain size), elastic properties, and microplasticity characteristics only took place in the α-Ti grade of maximum purity (VT1-0). UFG titanium of Grade 4 and PT3-V showed much higher thermal stability of properties, which was probably related to the presence of large amounts of various impurities.



Percolation Transitions on an Electrified Surface
Abstract
The phenomenon of percolative charge transport on an electrified surface during adsorption of an electrically conducting phase on a dielectric substrate has been considered for the first time. The influence of the adsorption kinetics and nucleation on the formation of percolation clusters ensuring a decrease of the charge with its subsequent neutralization has been studied. It has been established that percolation transitions play a determining role in the stability of an electric charge accumulated on a dielectric surface. An increase in the rate of spontaneous nucleation and initial surface coverage with an electrically conducting phase leads to a decrease in the duration of the percolation transition.


