The thermovoltaic effect in variband solid solution Si1–xGex (0 ≤ x ≤ 1)
- 作者: Saidov A.S.1, Leyderman A.Y.1, Karshiev A.B.1
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隶属关系:
- Physicotechnical Institute, Solar Physics Research and Production Corporation
- 期: 卷 42, 编号 7 (2016)
- 页面: 725-728
- 栏目: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/200055
- DOI: https://doi.org/10.1134/S1063785016070270
- ID: 200055
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详细
The thermovoltaic effect in films of variband solid solution Si1–xGex (0 ≤ x ≤ 1) has been observed for the first time. The samples comprised n-Si–p-Si1–xGex (0 ≤ x ≤ 1) heterostructures grown by liquid phase epitaxy. An electromotive force within 0.05–0.3 mV and a current of 0.0025–0.0035 μA appeared on heating samples in a temperature range from 40 to 250°C.
作者简介
A. Saidov
Physicotechnical Institute, Solar Physics Research and Production Corporation
编辑信件的主要联系方式.
Email: amin@uzsci.net
乌兹别克斯坦, Tashkent, 700084
A. Leyderman
Physicotechnical Institute, Solar Physics Research and Production Corporation
Email: amin@uzsci.net
乌兹别克斯坦, Tashkent, 700084
A. Karshiev
Physicotechnical Institute, Solar Physics Research and Production Corporation
Email: amin@uzsci.net
乌兹别克斯坦, Tashkent, 700084
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