Enviar artigo por via de e-mail InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics
- Autores: Maleev N.A.1,2, Vasil’ev A.P.3, Kuzmenkov A.G.3, Bobrov M.A.1, Kulagina M.M.1, Troshkov S.I.1, Maleev S.N.1, Belyakov V.A.4, Petryakova E.V.4, Kudryashova Y.P.4, Fefelova E.L.4, Makartsev I.V.4, Blokhin S.A.1, Ahmedov F.A.5, Egorov A.V.5, Fefelov A.G.4, Ustinov V.M.1,2,3
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Afiliações:
- Ioffe Institute, Russian Academy of Sciences
- St. Petersburg State Electrotechnical University LETI
- Submicron Heterostructures for Microelectronics Research Engineering Center, Russian Academy of Sciences
- JSC “NPP Salyut”
- NPO TECHNOMASH
- Edição: Volume 45, Nº 11 (2019)
- Páginas: 1092-1096
- Seção: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/208473
- DOI: https://doi.org/10.1134/S1063785019110075
- ID: 208473
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Resumo
A high-electron-mobility transistor (HEMT) based on InAlAs/InGaAs/InP heterostructures possessing higher breakdown characteristics is developed. An InGaAs composite channel structure, combined with completely selective forming of the double recess structure, is used in the devices. HEMTs with a T‑shaped gate 120 nm in length consist of four fingers, each 30 μm in width, exhibit a maximum transconductance of 810 mS/mm, 460-mA/mm maximum density of drain current and 8- to 10-V drain-to-gate breackdown voltage. The current-amplification cut-off frequency of transistors is over 115 GHz. Due to the enhanced breakdown voltage and the forming of a double recess structure by selective etching, the elaborated transistors are promising for application in the monolithic integrated circuits of the millimeter-wave medium power amplifiers.
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Sobre autores
N. Maleev
Ioffe Institute, Russian Academy of Sciences; St. Petersburg State Electrotechnical University LETI
Autor responsável pela correspondência
Email: maleev@beam.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197022
A. Vasil’ev
Submicron Heterostructures for Microelectronics Research Engineering Center, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
Rússia, St. Petersburg, 194021
A. Kuzmenkov
Submicron Heterostructures for Microelectronics Research Engineering Center, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
Rússia, St. Petersburg, 194021
M. Bobrov
Ioffe Institute, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
Rússia, St. Petersburg, 194021
M. Kulagina
Ioffe Institute, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
Rússia, St. Petersburg, 194021
S. Troshkov
Ioffe Institute, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
Rússia, St. Petersburg, 194021
S. Maleev
Ioffe Institute, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
Rússia, St. Petersburg, 194021
V. Belyakov
JSC “NPP Salyut”
Email: maleev@beam.ioffe.ru
Rússia, Nizhny Novgorod, 603107
E. Petryakova
JSC “NPP Salyut”
Email: maleev@beam.ioffe.ru
Rússia, Nizhny Novgorod, 603107
Yu. Kudryashova
JSC “NPP Salyut”
Email: maleev@beam.ioffe.ru
Rússia, Nizhny Novgorod, 603107
E. Fefelova
JSC “NPP Salyut”
Email: maleev@beam.ioffe.ru
Rússia, Nizhny Novgorod, 603107
I. Makartsev
JSC “NPP Salyut”
Email: maleev@beam.ioffe.ru
Rússia, Nizhny Novgorod, 603107
S. Blokhin
Ioffe Institute, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
Rússia, St. Petersburg, 194021
F. Ahmedov
NPO TECHNOMASH
Email: maleev@beam.ioffe.ru
Rússia, Moscow, 127018
A. Egorov
NPO TECHNOMASH
Email: maleev@beam.ioffe.ru
Rússia, Moscow, 127018
A. Fefelov
JSC “NPP Salyut”
Email: maleev@beam.ioffe.ru
Rússia, Nizhny Novgorod, 603107
V. Ustinov
Ioffe Institute, Russian Academy of Sciences; St. Petersburg State Electrotechnical University LETI; Submicron Heterostructures for Microelectronics Research Engineering Center, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197022; St. Petersburg, 194021
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