Current-Oscillation Power Growth in a Semiconductor Superlattice with Regard to Interminiband Tunneling

Аннотация

The total power of oscillations of current flowing through a semiconductor superlattice with different gaps between the first and second minibands is discussed. It is demonstrated that, with a decrease in the band gap, i.e., with an increase in the probability of interminiband tunneling, the total current-oscillation power increases when certain voltages are applied to the superlattice.