电邮这篇文章 InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics
- 作者: Maleev N.A.1,2, Vasil’ev A.P.3, Kuzmenkov A.G.3, Bobrov M.A.1, Kulagina M.M.1, Troshkov S.I.1, Maleev S.N.1, Belyakov V.A.4, Petryakova E.V.4, Kudryashova Y.P.4, Fefelova E.L.4, Makartsev I.V.4, Blokhin S.A.1, Ahmedov F.A.5, Egorov A.V.5, Fefelov A.G.4, Ustinov V.M.1,2,3
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隶属关系:
- Ioffe Institute, Russian Academy of Sciences
- St. Petersburg State Electrotechnical University LETI
- Submicron Heterostructures for Microelectronics Research Engineering Center, Russian Academy of Sciences
- JSC “NPP Salyut”
- NPO TECHNOMASH
- 期: 卷 45, 编号 11 (2019)
- 页面: 1092-1096
- 栏目: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/208473
- DOI: https://doi.org/10.1134/S1063785019110075
- ID: 208473
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详细
A high-electron-mobility transistor (HEMT) based on InAlAs/InGaAs/InP heterostructures possessing higher breakdown characteristics is developed. An InGaAs composite channel structure, combined with completely selective forming of the double recess structure, is used in the devices. HEMTs with a T‑shaped gate 120 nm in length consist of four fingers, each 30 μm in width, exhibit a maximum transconductance of 810 mS/mm, 460-mA/mm maximum density of drain current and 8- to 10-V drain-to-gate breackdown voltage. The current-amplification cut-off frequency of transistors is over 115 GHz. Due to the enhanced breakdown voltage and the forming of a double recess structure by selective etching, the elaborated transistors are promising for application in the monolithic integrated circuits of the millimeter-wave medium power amplifiers.
作者简介
N. Maleev
Ioffe Institute, Russian Academy of Sciences; St. Petersburg State Electrotechnical University LETI
编辑信件的主要联系方式.
Email: maleev@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 197022
A. Vasil’ev
Submicron Heterostructures for Microelectronics Research Engineering Center, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Kuzmenkov
Submicron Heterostructures for Microelectronics Research Engineering Center, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Bobrov
Ioffe Institute, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Kulagina
Ioffe Institute, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
S. Troshkov
Ioffe Institute, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
S. Maleev
Ioffe Institute, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Belyakov
JSC “NPP Salyut”
Email: maleev@beam.ioffe.ru
俄罗斯联邦, Nizhny Novgorod, 603107
E. Petryakova
JSC “NPP Salyut”
Email: maleev@beam.ioffe.ru
俄罗斯联邦, Nizhny Novgorod, 603107
Yu. Kudryashova
JSC “NPP Salyut”
Email: maleev@beam.ioffe.ru
俄罗斯联邦, Nizhny Novgorod, 603107
E. Fefelova
JSC “NPP Salyut”
Email: maleev@beam.ioffe.ru
俄罗斯联邦, Nizhny Novgorod, 603107
I. Makartsev
JSC “NPP Salyut”
Email: maleev@beam.ioffe.ru
俄罗斯联邦, Nizhny Novgorod, 603107
S. Blokhin
Ioffe Institute, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
F. Ahmedov
NPO TECHNOMASH
Email: maleev@beam.ioffe.ru
俄罗斯联邦, Moscow, 127018
A. Egorov
NPO TECHNOMASH
Email: maleev@beam.ioffe.ru
俄罗斯联邦, Moscow, 127018
A. Fefelov
JSC “NPP Salyut”
Email: maleev@beam.ioffe.ru
俄罗斯联邦, Nizhny Novgorod, 603107
V. Ustinov
Ioffe Institute, Russian Academy of Sciences; St. Petersburg State Electrotechnical University LETI; Submicron Heterostructures for Microelectronics Research Engineering Center, Russian Academy of Sciences
Email: maleev@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 197022; St. Petersburg, 194021
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