| Issue |
Section |
Title |
File |
| Vol 59, No 6 (2016) |
Physics of Semiconductors and Dielectrics |
Stability of Electrical Characteristics of MOS Structures Based on Gallium Oxide |
|
| Vol 59, No 7 (2016) |
Article |
Effect of a Short-Period InGaN/GaN Superlattice on the Efficiency of Blue LEDs at High Level of Optical Pumping |
|
| Vol 59, No 8 (2016) |
Physics of Semiconductors and Dielectrics |
A Solid-State Sub-Nanosecond Microwave Switch |
|
| Vol 60, No 11 (2018) |
Article |
Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering |
|
| Vol 60, No 12 (2018) |
Physics of Semiconductors and Dielectrics |
Fabrication and Investigation of Indium Nitride Possessing Ferromagnetic Properties |
|
| Vol 61, No 1 (2018) |
Article |
Diffusion of Magnesium in Led Structures with InGaN/GaN Quantum Wells at True Growth Temperatures 860–980°C of p-GaN |
|
| Vol 61, No 2 (2018) |
Article |
Internal Quantum Efficiency of Led Structures at Various Charge Carrier Distributions Over InGaN/GaN Quantum Wells |
|
| Vol 61, No 3 (2018) |
Article |
Electrical, Structural, and Magnetic Properties of Gallium Arsenide Doped with Iron |
|
