Thermodynamic modeling of the deposition of Si—C—N films from the gas phase during the decomposition of organosilicon compounds

Abstract

Thermodynamic modeling of the process of chemical vapor deposition (CVD) of SiC_x and SiC_xN_y films from the gas phase was carried out using organosilicon compounds (EtN(SiMe₃)₂, PhN(SiMe₃)₂, and PhSiMe₃) at reactor pressures of 0.01 and 10 Torr in the temperature range of 500–1200 K. It was established that regions of existence of two phase complexes, namely, SiC + Si₃N₄ + C and SiC + C, were present on the CVD diagrams calculated for the EtN(SiMe₃)₂—He and PhN(SiMe₃)₂—He systems. The CVD diagrams calculated for the EtN(SiMe₃)₂—NH₃, PhN(SiMe₃)₂—NH₃, and PhSiMe₃—NH₃ systems have regions of existence of three phase complexes, namely, Si₃N₄ + C, SiC + Si₃N₄ + C, and SiC + C. The composition of the obtained silicon-containing films was calculated.