PULSE METER ON THE MICROCONTROLLER OF THE RECHARGE TIME OF THE TIR STRUCTURE

Background. The task of producing high-speed semiconductor elements is inextricably linked with the use of MD structures used as the basis for these elements with weakly pronounced relaxation properties. Materials and methods. To measure the time constant of the exponential component of the pulse voltage, the «two-serif» method is used, implemented using a controlled ADC included in the microcontroller (MC). The current samples, except for the very first one, are the exponential voltage amplitudes obtained at the ADC output, after scaling by a factor of 2.72, the code matching scheme (CSC) is compared with the result of the initial sample. When the compared codes coincide, the SSC generates a single-level signal, which converts the trigger (Tg) to the zero state, which was previously in a single state under the influence of the signal of the first sample. As a result, a time interval equal in value to the time constant of the exponential voltage will be formed at the output of the Tg. Results. The construction of a meter based on MK makes it possible to implement a fairly universal meter of the recharge time of the TIR structure, the reaction voltage of which to an external impulse action will have an exponential component in its composition, not of a decreasing type, but of an established one. The «two-serif» method should also be used here, but it is already necessary to consider the ratio of the subsequent sampling of the amplitude of the exponential component of the input voltage to the initial sample. Conclusions. The use of an MC in a meter containing a controlled ADC that performs sampling operations at specified time intervals, by reducing the value of the latter, can estimate the value of the time constant of the exponential component of the stress of the reaction of the TIR structure to external influences, and therefore evaluate the relaxation properties of the latter, with high accuracy.