Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films
- Авторлар: Novikova N.N.1, Yakovlev V.A.1, Klimin S.A.1, Malin T.V.2, Gilinsky A.M.2, Zhuravlev K.S.2,3
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Мекемелер:
- Institute of Spectroscopy, Russian Academy of Sciences
- Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences
- Novosibirsk State University
- Шығарылым: Том 127, № 1 (2019)
- Беттер: 36-39
- Бөлім: Spectroscopy of Condensed States
- URL: https://journal-vniispk.ru/0030-400X/article/view/166033
- DOI: https://doi.org/10.1134/S0030400X19070208
- ID: 166033
Дәйексөз келтіру
Аннотация
The reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of aluminum nitride have been measured. In the spectra of attenuated total reflection, surface phonon and plasmon–phonon polaritons were observed. A high concentration of charge carriers in the gallium nitride film and their practical absence in the aluminum nitride film were experimentally observed.
Авторлар туралы
N. Novikova
Institute of Spectroscopy, Russian Academy of Sciences
Email: klimin@isan.troitsk.ru
Ресей, MoscowTroitsk, 108840
V. Yakovlev
Institute of Spectroscopy, Russian Academy of Sciences
Email: klimin@isan.troitsk.ru
Ресей, MoscowTroitsk, 108840
S. Klimin
Institute of Spectroscopy, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: klimin@isan.troitsk.ru
Ресей, MoscowTroitsk, 108840
T. Malin
Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences
Email: klimin@isan.troitsk.ru
Ресей, Novosibirsk, 630090
A. Gilinsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences
Email: klimin@isan.troitsk.ru
Ресей, Novosibirsk, 630090
K. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences; Novosibirsk State University
Email: klimin@isan.troitsk.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
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