Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films


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Аннотация

The reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of aluminum nitride have been measured. In the spectra of attenuated total reflection, surface phonon and plasmon–phonon polaritons were observed. A high concentration of charge carriers in the gallium nitride film and their practical absence in the aluminum nitride film were experimentally observed.

Авторлар туралы

N. Novikova

Institute of Spectroscopy, Russian Academy of Sciences

Email: klimin@isan.troitsk.ru
Ресей, MoscowTroitsk, 108840

V. Yakovlev

Institute of Spectroscopy, Russian Academy of Sciences

Email: klimin@isan.troitsk.ru
Ресей, MoscowTroitsk, 108840

S. Klimin

Institute of Spectroscopy, Russian Academy of Sciences

Хат алмасуға жауапты Автор.
Email: klimin@isan.troitsk.ru
Ресей, MoscowTroitsk, 108840

T. Malin

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences

Email: klimin@isan.troitsk.ru
Ресей, Novosibirsk, 630090

A. Gilinsky

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences

Email: klimin@isan.troitsk.ru
Ресей, Novosibirsk, 630090

K. Zhuravlev

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences; Novosibirsk State University

Email: klimin@isan.troitsk.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090

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