电邮这篇文章 Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films
- 作者: Novikova N.N.1, Yakovlev V.A.1, Klimin S.A.1, Malin T.V.2, Gilinsky A.M.2, Zhuravlev K.S.2,3
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隶属关系:
- Institute of Spectroscopy, Russian Academy of Sciences
- Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences
- Novosibirsk State University
- 期: 卷 127, 编号 1 (2019)
- 页面: 36-39
- 栏目: Spectroscopy of Condensed States
- URL: https://journal-vniispk.ru/0030-400X/article/view/166033
- DOI: https://doi.org/10.1134/S0030400X19070208
- ID: 166033
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详细
The reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of aluminum nitride have been measured. In the spectra of attenuated total reflection, surface phonon and plasmon–phonon polaritons were observed. A high concentration of charge carriers in the gallium nitride film and their practical absence in the aluminum nitride film were experimentally observed.
作者简介
N. Novikova
Institute of Spectroscopy, Russian Academy of Sciences
Email: klimin@isan.troitsk.ru
俄罗斯联邦, MoscowTroitsk, 108840
V. Yakovlev
Institute of Spectroscopy, Russian Academy of Sciences
Email: klimin@isan.troitsk.ru
俄罗斯联邦, MoscowTroitsk, 108840
S. Klimin
Institute of Spectroscopy, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: klimin@isan.troitsk.ru
俄罗斯联邦, MoscowTroitsk, 108840
T. Malin
Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences
Email: klimin@isan.troitsk.ru
俄罗斯联邦, Novosibirsk, 630090
A. Gilinsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences
Email: klimin@isan.troitsk.ru
俄罗斯联邦, Novosibirsk, 630090
K. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences; Novosibirsk State University
Email: klimin@isan.troitsk.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
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