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Structural features and electrical properties of si(al) thermal migration channels for high-voltage photovoltaic converters
- Authors: Lomov A.A.1, Seredin B.M.2, Martyushov S.Y.3, Tatarintsev A.A.1, Popov V.P.2, Malibashev A.V.2
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Affiliations:
- Valiev Institute of Physics and Technology of Russian Academy of Sciences
- Platov South Russian State Polytechnic Institute (NPI)
- Technological Institute for Superhard and Novel Carbon Materials
- Issue: Vol 53, No 2 (2024)
- Pages: 119-131
- Section: ДИАГНОСТИКА
- URL: https://journal-vniispk.ru/0544-1269/article/view/262672
- DOI: https://doi.org/10.31857/S0544126924020018
- ID: 262672
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Abstract
The results of a study of the structural features and electrical properties of Si(Al) through thermomigration p-channels in a silicon wafer are presented. Structural studies were performed using X-ray methods of projection topography, diffraction reflection curves and scanning electron microscopy. It is shown that the channel-matrix interface is coherent without the formation of mismatch dislocations. The possibility of using an array of thermomigration p-channels of 15 elements to form a monolithic photovoltaic solar module in a Si(111) silicon wafer based on p-channels with a width of 100 microns with walls in the plane is shown. The monolithic solar module has a conversion efficiency of 13.1%, an idle voltage of 8.5 V and a short-circuit current density of 33 mA/cm².
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About the authors
A. A. Lomov
Valiev Institute of Physics and Technology of Russian Academy of Sciences
Author for correspondence.
Email: lomov@ftian.ru
Russian Federation, Moscow
B. M. Seredin
Platov South Russian State Polytechnic Institute (NPI)
Email: lomov@ftian.ru
Russian Federation, Novocherkassk
S. Yu. Martyushov
Technological Institute for Superhard and Novel Carbon Materials
Email: lomov@ftian.ru
Russian Federation, Troitsk
A. A. Tatarintsev
Valiev Institute of Physics and Technology of Russian Academy of Sciences
Email: lomov@ftian.ru
Russian Federation, Moscow
V. P. Popov
Platov South Russian State Polytechnic Institute (NPI)
Email: lomov@ftian.ru
Russian Federation, Novocherkassk
A. V. Malibashev
Platov South Russian State Polytechnic Institute (NPI)
Email: lomov@ftian.ru
Russian Federation, Novocherkassk
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Supplementary files
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Fig. 1. Fragment of the diagram of the sample plate Si(111) with p-channels Si(Al) (a) and contact locations for measuring the electrical U-I-R parameters of the p-n junction (b), where h is the plate thickness; L is the distance between the channels; l is the channel width; x = 0 is the position of the channel center on the plate surface.
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Fig. 2. Schematic diagram of a monolithic solar module consisting of several elements: 1 — initial silicon wafer; 2 — p-channel Si(Al) (ThM process); 3 — working p—n-junction; 4 — separating groove; 5 — Ag shunt; 6 — p-layer Si(B) (solid-state deep diffusion).
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4.
Fig. 3. Fragments of SEM images (a, b) and a micrograph (c) of the same section of the Si(111) surface (a, c) and a cleavage (b) of the thermomigration p-channel of Si(Al), oriented on the wafer surface along the 112 direction
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5.
Fig. 4. Fragments of SEM images of the rear surface of Si(111) (a) and a cleavage (b) of two adjacent thermomigration channels of Si(Al), oriented along the |112| and |110| directions.
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6.
Fig. 5. Fragments of projection topograms with an array of through vertical Si(Al) ThM channels formed along the direction of the Si(111) plate. Reflections: g || (440) (a), (b) and g || (224) (c). AgKα₁ radiation.
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7.
Fig. 6. Diffraction transmission curves of 220 reflection in the region of the ThM channel of Si(Al) in the matrix Si(111) depending on the position of the X-ray beam relative to the channel center: x = 350 (1), 50 (2), 0 (3), –50 μm (4). Radiation λ = 0.070931 nm.
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8.
Fig. 7. Inverse characteristics I(U) (1, 2) for individual n-p-n structures (see Fig. 1, b) of the sample and the model curve I(U) (3) for an n-type silicon wafer (P, 10¹⁴ cm⁻³) (a); metallurgical micrograph of the SiAl channel (b); G is the direction of the temperature gradient during thermomigration.
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9.
Fig. 8. I(U) characteristics of the AC (1) and BC (2) p-n junctions at the p-channel boundary (see Fig. 1, b). Solid lines (3), (4) represent the simulation of an abrupt p-n junction for n-type Si (ρ = 45 Ohm×cm with α = 1.54 and α = 1, respectively (a); temperature dependences of the resistance R on the width l of the Si(Al) channel for T = 1300 K (5), 1350 K (6), and 1400 K (7) (b).
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10.
Fig. 9. J-U (a) and Pd-U (b) characteristics for monolithic MHSM solar modules with a radiation power of 1000 W/m². In both figures: 1 - reference module #A; 2 - defective module #B.
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11.
Fig. 10. Short-circuit density Jsc (a), open-circuit voltage Uoc (b) and efficiency Eff (c) for the i-th solar cell of module #B (radiant power 1000 W/m², Tsc = 25°C).
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12.
Fig. 11. Fragments of the X-ray projection of the Lang topogram of a 15-element MSCM module (see Fig. 2) with perfect (a) and defective (b) solar cells: Sh₂₃, Sh₈₉ — Ag shunts between channels on the back side of the module; 1, 2 — working p—n junction; 3 — boundary of Ag shunts; 4 — left boundary of the dividing groove; nᵢ — p-channel number. Reflection – 224, emission — МоКα₁.
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