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Issue Title File
Vol 53, No 6 (2024) III-nitride HEMT Heterostructures with an Ultrathin AlN Barrier: Fabrication and Experimental Application
Gusev A.S., Sultanov A.O., Ryzhuk R.V., Nevolina T.N., Tsunvaza D., Safaraliev G.K., Kargin N.I.
Vol 53, No 6 (2024) A Brief Overview of the Typology of Neurons and Analysis of Using Memristor Crossbars
Tokarev A.A., Khorin I.A.
Vol 53, No 3 (2024) A comprehensive study of nonuniformity properties of the LiCoO2 thin-film cathode fabricated by RF sputtering
Kurbatov S.V., Rudy A.S., Naumov V.V., Mironenko A.A., Savenko O.V., Smirnova M.A., Mazaletsky L.A., Pukhov D.E.
Vol 52, No 5 (2023) A Computer Investigation of the Effect of High-Resistance Layer Inhomogeneities on Resistive Switching in a Bismuth Selenide Microcrystal Structure
Sirotkin V.V.
Vol 53, No 4 (2024) Al Islands on Si(111): Growth Temperature, Morphology and Strain
Lomov A.A., Zakharov D.M., Tarasov M.A., Chekushkin A.M., Tatarintsev A.A., Vasiliev A.L.
Vol 53, No 1 (2024) Analysis of Nonlinear Distortions of Dphemt Structures Based on a GaAs/InGaAs Compound with Double-Sided Delta-Doping
Golikov O.L., Kodochigov N.E., Obolensky S.V., Puzanov A.S., Tarasova E.A., Khazanova S.V.
Vol 53, No 1 (2024) Application of Spectral Ellipsometry for Dielectric, Metal and Semiconductor Films in Microelectronics Technology
Gaidukasov R.A., Miakonkikh A.V.
Vol 53, No 2 (2024) Application of the finite element method for calculating the surface acoustic wave parameters and devices
Koigerov A.S.
Vol 53, No 4 (2024) Approximation of the Absorption Spectrum of Indium Phosphide in the Context of Simulation of the Process of Sensitivity Enhancement
Makarenko P.V., Zolnikov V.K., Zarevich A.I., Zalenskaya N.Y., Poluektov A.V.
Vol 54, No 1 (2025) AZ nLOF series photoresist films on monocrystalline silicon
Brinkevich D.I., Grinyuk E.V., Prosolovich V.S., Zubova O.A., Kolos V.V., Brinkevich S.D., Vabishchevich S.A.
Vol 54, No 1 (2025) Calculation of distributions of electron beam energy absorbed in PMMA and Si using various scattering models
Rogozhin A.E., Sidorov F.A.
Vol 52, No 1 (2023) Calculation of the Electric Field Strength and Current Density Inside a Thin Metal Layer, Taking into Account the Skin Effect
Zavitaev E.V., Rusakov O.V., Chukhleb E.P.
Vol 53, No 3 (2024) Carrier Scattering Analysis in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier
Gusev A.S., Sultanov A.O., Katkov A.V., Ryndya S.M., Siglovaya N.V., Klochkov A.N., Ryzhuk R.V., Kargin N.I., Borisenko D.P.
Vol 53, No 4 (2024) CNOT Quantum Gate Based on Spatial Photonic Qubits Under Resonant Electro-Optical Control
Tsukanov A.V., Kateev I.Y.
Vol 52, No 4 (2023) Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures
Efremov A.M., Bobylev A.V., Kwon K.
Vol 53, No 6 (2024) Conductivity Study of Carbon Nanotubes Deposited on Iridium Silicon-Silicide Substrate
Kerimov E.A.
Vol 52, No 1 (2023) Controlling Silicon Etching Parameters in RF CHF3 Plasma by Optical Emission Spectroscopy
Murin D.B., Chesnokov I.A., Pivovarenok S.A., Efremov A.M.
Vol 52, No 2 (2023) Cross Sections of Scattering Processes in Electron-Beam Lithography
Rogozhin A.E., Sidorov F.A.
Vol 52, No 3 (2023) Design of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor
Tsunvaza D., Ryzhuk R.V., Vasil’evskii I.S., Kargin N.I., Klokov V.A.
Vol 52, No 6 (2023) Design of integrated voltage multipliers using standard CMOS technologies
Sinyukin A.S., Konoplev B.G., Kovalev A.V.
Vol 53, No 5 (2024) Development of an imagery representation apparatus for information representation in neyromorphic devices
Simonov N.А.
Vol 54, No 1 (2025) Development of atomic layer deposition technological platform for the synthesis of micro- and nanoelectronics materials
Amashaev R.R., Isubgadzhiev S.M., Rabadanov M.H., Abdulagatov I.M.
Vol 53, No 3 (2024) Development of the Ge-MDST instrument structure with an induced p-type channel
Alyabina N.A., Arkhipova E.A., Buzynin Y.N., Denisov S.A., Zdoroveishchev A.V., Titova A.M., Chalkov V.Y., Shengurov V.G.
Vol 52, No 4 (2023) Effect of Magnetron Sputtering Power on ITO Film Deposition at Room Temperature
Saenko A.V., Vakulov Z.E., Klimin V.S., Bilyk G.E., Malyukov S.P.
Vol 52, No 5 (2023) Effect of the Material of Electrodes on Electroformation and Properties of Memristors Based on Open Metal–SiO2–Metal Sandwich Structures
Mordvintsev V.M., Kudryavtsev S.E., Naumov V.V., Gorlachev E.S.
Vol 53, No 5 (2024) Electron cyclotron resonance plasma studies using the second cyclotron harmonic resonance
Kovalchuk А.V., Shapoval S.Y.
Vol 53, No 5 (2024) Electron transport and field electron emission mechanisms in 2D noncrystalline hetero structures with quantum barrier
Krasnikov G.Y., Bokarev V.P., Teplov G.S., Yafarov R.K.
Vol 53, No 1 (2024) Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter
Golikov O.L., Zabavichev I.Y., Ivanov A.S., Obolensky S.V., Obolenskaya E.S., Paveliev D.G., Potekhin A.A., Puzanov A.S., Tarasova E.A., Khazanova S.V.
Vol 52, No 5 (2023) Electrophysical Parameters and Emission Spectra of the Glow Discharge of Difluorodichloromethane
Murin D.B., Chesnokov I.A., Gogulev I.A., Grishkov A.E.
Vol 52, No 6 (2023) Electrophysical parameters of p-i-n photodiodes, irradiated with 60Co γ-quanta
Kovalchuk N.S., Lastovsky S.B., Odzhaev V.B., Petlitsky A.N., Prosolovich V.S., Shestovsky D.V., Yavid V.Y., Yankovsky Y.N.
Vol 53, No 4 (2024) Evolution of the Current-Voltage Characteristic of a Bipolar Memristor
Fadeev A.V., Rudenko K.V.
Vol 54, No 1 (2025) Exposure kinetics of a positive photoresist layer on an optically matched substrate
Kudrya V.P.
Vol 52, No 3 (2023) Fast Electrochemical Micropump for Portable Drug Delivery Module
Uvarov I.V., Shlepakov P.S., Abramychev A.M., Svetovoy V.B.
Vol 53, No 1 (2024) Features of Electroforming and Functioning of Memristors Based on Open TiN–SiO2–Mo Sandwich Structures
Gorlachev E.S., Mordvintsev V.M., Kudryavtsev S.E.
Vol 54, No 1 (2025) Formation of nickel-based composite magnetic nanostructures for microelectronics and nanodiagnostics devices
Vorobyova A.I., Tishkevich D.I., Outkina E.A., Khodin A.A.
Vol 53, No 6 (2024) Gas Phase Composition and Fluorine Atom Kinetics in SF6 Plasma
Myakonkikh A.V., Kuzmenko V.O., Efremov A.M., Rudenko K.V.
Vol 52, No 3 (2023) Hydrogen Plasma under Conditions of Electron-Cyclotron Resonance in Microelectronics Technology
Polushkin E.A., Nefed’ev S.V., Koval’chuk A.V., Soltanovich O.A., Shapoval S.Y.
Vol 52, No 4 (2023) Influence of Boundary Conditions on Quantum Magnetotransport in a Thin Film
Kuznetsova I.A., Savenko O.V., Romanov D.N.
Vol 54, No 1 (2025) Influence of boundary conditions on transport in a quantum well
Romanov D.N., Kuznetsova I.A.
Vol 52, No 5 (2023) Influence of Hot Carrier Degradation on the Characteristics of a High-Voltage SOI Transistor with a Large Drift Region
Novoselov A.S., Masalskii N.V.
Vol 53, No 3 (2024) Influence of Hydrogen Additive on Electrophysical Parameters and Emission Spectra of Tetrafluoromethane Plasma
Murin D.B., Grazhdyan A.Y., Chesnokov I.A., Gogulev I.A.
Vol 53, No 6 (2024) Influence of Manufacture Imperfections and Electrical Noise on Evolution of a Charge Qubit under Optical Control
Tsukanov A.V., Kateev I.Y.
Vol 53, No 2 (2024) Influence of nickel impurities on the operational parameters of a silicon solar cell
Kenzhaev Z.T., Zikrillaev N.F., Odzhaev V.B., Ismailov K.A., Prosolovich V.S., Zikrillaev K.F., Koveshnikov S.V.
Vol 52, No 4 (2023) Influence of Structural Defects on the Electrophysical Parameters of pin-Photodiodes
Koval’chuk N.S., Lastovskii S.B., Odzhaev V.B., Petlitskii A.N., Prosolovich V.S., Shestovsky D.V., Yavid V.Y., Yankovskii Y.N.
Vol 53, No 1 (2024) Interconnects Materials for Integrated Circuit Technology Below 5 Nm Node
Rogozhin A.E., Glaz O.G.
Vol 54, No 1 (2025) Investigation of double patterning method with the usage of antispacer
Tikhonova E.D., Gornev E.S.
Vol 52, No 2 (2023) Investigation of the Optical Properties of Ultrathin Films Based on Metal Silicide
Kerimov E.A.
Vol 52, No 2 (2023) Investigation of the Possibility of Optimizing the Interaction of NV Centers and Photons by Changing the Shape of Microresonators
Tsukanov A.V., Kateev I.Y.
Vol 53, No 5 (2024) Investigation of ways to synthesize concurrent error-detection circuits based on boolean signals correction using uniform separable codes
Efanov D.V., Yelina E.I.
Vol 53, No 3 (2024) Kinetics of electromigration mass transfer in micro- and nanoelectronics interface elements depending on the strength of thin-film junctions
Makhviladze T.M., Sarychev M.E.
Vol 53, No 5 (2024) Mathematical modeling of a microprocessor liquid cooling system
Andreev А.I., Semenov A.E.
Vol 52, No 4 (2023) Mechanisms of the Redistribution of Carbon Contamination in Films Formed by Atomic Layer Deposition
Fadeev A.V., Myakon’kikh A.V., Smirnova E.A., Simakin S.G., Rudenko K.V.
Vol 52, No 6 (2023) MEMS SWITCH BASED ON CANTILEVER WITH INCREASED CONTACT FORCE
Belozerov I.A., Uvarov I.V.
Vol 53, No 4 (2024) Methodology of Production of Photo-Sensitive Elements on Ptsi Basis
Kerimov E.A.
Vol 53, No 1 (2024) Modeling of Physical-Chemical and Electronic Properties of Lithium-Containing 4H—SiC and Binary Phases of the Si—C–Li System
Asadov M.M., Huseynova S.S., Mustafaeva S.N., Mammadova S.O., Lukichev V.F.
Vol 53, No 6 (2024) Modeling of Structural Properties and Transport Phenomena in Doped Multicomponent 2D Semiconductors
Asadov S.M., Mustafaeva S.N., Mammadov A.N., Lukichev V.F.
Vol 53, No 1 (2024) Modeling of the Electronic Properties of M-Doped Supercells (М = Zr, Nb) with a Monoclinic Structure For Lithium-Ion Batteries
Asadov M.M., Mammadova S.O., Mustafaeva S.N., Huseynova S.S., Lukichev V.F.
Vol 53, No 2 (2024) Modeling the diffusion of atoms in multicomponent semiconductors in a disordered state
Asadov S.M.
Vol 53, No 1 (2024) Molecular Layering of an Additive Layer of Silicon Dioxide on Anodized Tantalum and Niobium Oxides
Ezhovskii Y.K., Mikhailovskii S.V.
Vol 52, No 4 (2023) Multilevel Memristive Structures Based on YBa2Cu3O7–δ Epitaxial Films
Tulina N.A., Rossolenko A.N., Borisenko I.Y., Ivanov A.A.
Vol 53, No 5 (2024) Nanophotonic beam-splitter based on quantum dots with förster coupling
Tsukanov А.V., Kateev I.Y.
Vol 52, No 5 (2023) Neuromorphic Systems: Devices, Architecture, and Algorithms
Fetisenkova K.A., Rogozhin A.E.
Vol 53, No 5 (2024) New concept for the development of high-performance X-ray lithography
Chkhalo N.I.
Vol 52, No 6 (2023) OPTICALLY PUMPED BIPOLAR TRANSISTOR
Altudov Y.K., Gaev D.S., Pskhu A.V., Rekhviashvili S.S.
Vol 52, No 2 (2023) Oxide Memristors for ReRAM: Approaches, Characteristics, and Structures
Isaev A.G., Permyakova O.O., Rogozhin A.E.
Vol 53, No 1 (2024) Parameters and Composition of Plasma in a Mixture of CF4 + H2 + Ar: Effect of the CF4/H2 Ratio
Miakonkikh A.V., Kuzmenko V.O., Efremov A.M., Rudenko K.V.
Vol 53, No 5 (2024) Parameters matching of the thermoelectric system parameters for cooling heat-loaded electronics elements
Vasil’ev Е.N.
Vol 52, No 5 (2023) Patterns of the Formation of Mobile Localized Magnetic Configurations and Technology for Manufacturing Structures for the Implementation of Magnetic Memory Elements
Prokaznikov A.V., Paporkov V.A., Chirikov V.A., Evseeva N.A.
Vol 52, No 6 (2023) Performance calculation for a MEMS switch with «floating» electrode
Morozov M.O., Uvarov I.V.
Vol 52, No 2 (2023) Plasma Parameters and Kinetics of Reactive Ion Etching of SiO2 and Si3N4 in an HBr/Cl2/Ar Mixture
Efremov A.M., Betelin V.B., Kwon K.
Vol 53, No 6 (2024) Plasma Parameters and Si/SiO2 Etching Kinetics in Mixtures of Fluorocarbon Gases with Argon and Helium
Efremov A.M., Betelin V.B., Kwon K.H.
Vol 53, No 4 (2024) Plasmochemical and Reactive Ion Etching of Gallium Arsenide in Difluorodichloromethane with Helium
Murin D.B., Chesnokov I.A., Gogulev I.A., Anokhin A.L., Moloskin A.E.
Vol 52, No 3 (2023) Precise Tomography of Qudits
Bogdanov Y.I., Bogdanova N.A., Kuznetsov Y.A., Koksharov K.B., Lukichev V.F.
Vol 52, No 6 (2023) PROBE AND SPECTRAL DIAGNOSTICS OF PLASMA GAS ENVIRONMENT: BCl3-Cl2
Murin D.B., Chesnokov I.A., Gogulev I.A., Grishkov A.E.
Vol 53, No 5 (2024) Producing of graphene: deposition and annealing
Shustin Е.G.
Vol 52, No 5 (2023) Protective Freely Hanging Films for Projection Lithography Installations in the Extreme UV Range
Zuev S.Y., Lopatin A.Y., Luchin V.I., Salashchenko N.N., Tsybin N.N., Chkhalo N.I.
Vol 52, No 6 (2023) Prototypes of devices for heterogeneous hybrid semiconductor electronics with an embedded biomolecular domain
Baranov M.A., Karseeva E.K., Tsybin O.Y.
Vol 52, No 3 (2023) Recording the Polarization State of a Photon in the Correlated Electronic States of an Array of Quantum Dots
Tsukanov A.V., Kateev I.Y.
Vol 53, No 1 (2024) Research of Memristor Effect in Crossbar Architecture for Neuromorphic Artificial Intelligence Systems
Polyakova V.V., Saenko A.V., Kots I.N., Kovalev A.V.
Vol 53, No 2 (2024) Ripple of a DC/DC converter based on SEPIC topology
Bityukov V.K., Lavrenov A.I.
Vol 52, No 2 (2023) SEM Measurements of the Dimensions of Relief Structures in the Technological Process of Manufacturing Microcircuits
Novikov Y.A., Filippov M.N.
Vol 52, No 3 (2023) Simulation of a System of Nanoantennas Located in a TSV Channel as a System for Receiving and Transmitting Data
Serov D.A., Khorin I.A.
Vol 53, No 6 (2024) Simulation of Memristive Crossbar Array Electrical Behavior in Neuromorphic Electronic Blocks
Dudkin A.P., Ryndin E.A., Andreeva N.V.
Vol 53, No 3 (2024) Simulation of silicon conical field effect GAA nanotransistors with stack SiO2/HfO2 dielectric of gate
Masalsky N.V.
Vol 52, No 4 (2023) Simulation of Silicon FETs with a Fully Enclosed Gate with a High-k Gate Dielectric
Masalskii N.V.
Vol 52, No 1 (2023) Simulation of Supercell Defect Structure and Transfer Phenomena in TlInTe2
Asadov M.M., Mustafaeva S.N., Guseinova S.S., Lukichev V.F.
Vol 52, No 3 (2023) Simulation of the Adsorption and Diffusion of Lithium Atoms on Defective Graphene for a Li-Ion Battery
Asadov M.M., Mammadova S.O., Huseynova S.S., Mustafaeva S.N., Lukichev V.F.
Vol 52, No 5 (2023) Simulation of the Effect of Lattice Defects on the Work of Separating Joined Materials
Makhviladze T.M., Sarychev M.E.
Vol 52, No 6 (2023) Simulation of vertical ballistic quantum-barrier field-effect transistor based on undoped AlxGa1–xAs quantum nanowire
Pozdnyakov D.V., Borzdov A.V., Borzdov V.M.
Vol 52, No 4 (2023) Single Event Displacement Effects in a VLSI
Chumakov A.I.
Vol 53, No 2 (2024) Structural features and electrical properties of si(al) thermal migration channels for high-voltage photovoltaic converters
Lomov A.A., Seredin B.M., Martyushov S.Y., Tatarintsev A.A., Popov V.P., Malibashev A.V.
Vol 53, No 1 (2024) Structuring of the Surface of Thin Carbon Films During Activation by Microsecond Current Pulses
Nefedov D.V., Shabunin N.O., Bratashov D.N.
Vol 54, No 1 (2025) Study of deposition modes of Cu2O films by RF magnetron sputtering for application in solar cell structures
Saenko A.V., Zheits V.V., Vakulov Z.E., Smirnov V.A.
Vol 52, No 1 (2023) Study of Photodetectors with Schottky Barriers Based on the IrSi–Si Contact
Kerimov E.A.
Vol 53, No 4 (2024) Study of the Photovoltaic Parameters of Inorganic Solar Cells Based on Cu2O and CuO
Saenko A.V., Bilyk G.E., Smirnov V.A.
Vol 52, No 4 (2023) Study of the Sensitive Region of a MOS Transistor to the Effects of Secondary Particles Arising from Ionizing Radiation
Glushko A.A., Morozov S.A., Chistyakov M.G.
Vol 52, No 4 (2023) Study of the Sensor Properties of Ordered ZnO Nanorod Arrays for the Detection of UV Radiation
Evstafieva M.V., Knyazev M.A., Korepanov V.I., Red’kin A.N., Roschupkin D.V., Yakimov E.E.
Vol 52, No 3 (2023) Surface Morphology and Photoluminescence Spectra of Pseudomorphic {InGaAs/GaAs} Superlattices on GaAs (100), (110), and (111)A Substrates
Klimov E.A., Pushkarev S.S., Klochkov A.N., Mozhaeva M.O.
Vol 53, No 5 (2024) Temperature dependences of the breakdown voltage of a high-voltage LDMOS transistor
Novoselov А.S., Gusev М.R., Masalsky N.V.
Vol 53, No 2 (2024) Temporary changes in current flow mechanisms in erbium-doped porous silicon
Khamzin E.K., Uslin D.A.
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