Email this article On the photoconductivity of TlInSe2
- Authors: Ismailov N.D.1, Abilov C.I.1, Gasanova M.S.1
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Affiliations:
- Azerbaijan Technical University
- Issue: Vol 51, No 5 (2017)
- Pages: 632-635
- Section: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journal-vniispk.ru/1063-7826/article/view/199893
- DOI: https://doi.org/10.1134/S1063782617050104
- ID: 199893
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Abstract
The current–voltage (I–V) and photocurrent–light intensity (Ipc–Φ) characteristics and the photoconductivity relaxation kinetics of TlInSe2 single crystals are investigated. Anomalously long relaxation times (τ ≈ 103 s) and some other specific features of the photoconductivity are observed, which are explained within the barrier theory of inhomogeneous semiconductors. The heights of the drift and recombination barriers are found to be, respectively, Edr ≈ 0.1 eV and Er ≈ 0.45 eV.
About the authors
N. D. Ismailov
Azerbaijan Technical University
Author for correspondence.
Email: ismailovnamik@yahoo.com
Azerbaijan, Baku, Az-1073
Ch. I. Abilov
Azerbaijan Technical University
Email: ismailovnamik@yahoo.com
Azerbaijan, Baku, Az-1073
M. S. Gasanova
Azerbaijan Technical University
Email: ismailovnamik@yahoo.com
Azerbaijan, Baku, Az-1073
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