Optical thyristor based on GaAs/InGaP materials

B. N. Zvonkov; N. V. Baidus; S. M. Nekorkin; O. V. Vikhrova; A. V. Zdoroveyshev; A. V. Kudrin; V. E. Kotomina

doi:10.1134/S1063782617110306

Optical thyristor based on GaAs/InGaP materials

作者: Zvonkov B.N.¹, Baidus N.V.¹, Nekorkin S.M.¹, Vikhrova O.V.¹, Zdoroveyshev A.V.¹, Kudrin A.V.¹, Kotomina V.E.¹
隶属关系:
1. Physico-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod
期: 卷 51, 编号 11 (2017)
页面: 1391-1394
栏目: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
URL: https://journal-vniispk.ru/1063-7826/article/view/201450
DOI: https://doi.org/10.1134/S1063782617110306
ID: 201450

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The possibility of creating thyristor structures with external optical control by laser radiation with a wavelength of ~800 nm, based on single-crystal wafers of semi-insulating GaAs and layers of InGaP with the lattice parameter compatible with GaAs, is shown.