Enhancement of Photoconductivity by Carrier Screening Effect in  n -GaSb/InAs/ p -GaSb Heterostructure with Single Deep Quantum Well

L. V. Danilov; M. P. Mikhailova; R. V. Levin; G. G. Konovalov; E. V. Ivanov; I. A. Andreev; B. V. Pushnyi; G. G. Zegrya

doi:10.1134/S1063782618040115

Enhancement of Photoconductivity by Carrier Screening Effect in n-GaSb/InAs/p-GaSb Heterostructure with Single Deep Quantum Well

Авторы: Danilov L.V.¹, Mikhailova M.P.¹, Levin R.V.¹, Konovalov G.G.¹, Ivanov E.V.¹, Andreev I.A.¹, Pushnyi B.V.¹, Zegrya G.G.¹
Учреждения:
1. Ioffe Institute
Выпуск: Том 52, № 4 (2018)
Страницы: 493-496
Раздел: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure
URL: https://journal-vniispk.ru/1063-7826/article/view/202848
DOI: https://doi.org/10.1134/S1063782618040115
ID: 202848

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Аннотация

n-GaSb/n-InAs/p-GaSb heterostructure with a single InAs QW was grown for the first time by MOVPE. Photocurrent spectra were obtained at reverse bias in the range from 0 to 0.8 V. It was shown that the photocurrent increases nonlinearly. The maximum of differential photoconductivity is archived at low applied voltage up to 0.2 V. This effect was explained by electrostatic screening of electrons localized in QW.