MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

The possibility of InAs nanowires MBE growth on silicon (111) substrates with a nanometer buffer layer of silicon carbide has been demonstrated for the first time. The NWs diameter turned out to be smaller than on the silicon substrate—the minimum of NWs diameter was less than 10 nm. In addition, dependence of structural properties of InGaAs nanowires on composition was studied.

作者简介

R. Reznik

St. Petersburg Academic University Russian Academy of Sciences; ITMO University; Institute for Analytical Instrumentation Russian Academy of Sciences; Peter the Great Polytechnic University

编辑信件的主要联系方式.
Email: moment92@mail.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 190103; St. Petersburg, 195251

K. Kotlyar

St. Petersburg Academic University Russian Academy of Sciences

Email: moment92@mail.ru
俄罗斯联邦, St. Petersburg, 194021

I. Soshnikov

St. Petersburg Academic University Russian Academy of Sciences; Institute for Analytical Instrumentation Russian Academy of Sciences

Email: moment92@mail.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 190103

S. Kukushkin

Institute of Problems of Mechanical Engineering Russian Academy of Science

Email: moment92@mail.ru
俄罗斯联邦, St. Petersburg, 199178

A. Osipov

Institute of Problems of Mechanical Engineering Russian Academy of Science

Email: moment92@mail.ru
俄罗斯联邦, St. Petersburg, 199178

G. Cirlin

St. Petersburg Academic University Russian Academy of Sciences; ITMO University; Institute for Analytical Instrumentation Russian Academy of Sciences; Peter the Great Polytechnic University

Email: moment92@mail.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 190103; St. Petersburg, 195251

补充文件

附件文件
动作
1. JATS XML

版权所有 © Pleiades Publishing, Ltd., 2018