Email this article Electrical Properties of p-NiO/n-Si Heterostructures Based on Nanostructured Silicon
- Authors: Parkhomenko H.P.1, Solovan M.N.1, Maryanchuk P.D.1
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Affiliations:
- Yuriy Fedkovych Chernivtsi National University
- Issue: Vol 52, No 7 (2018)
- Pages: 859-863
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journal-vniispk.ru/1063-7826/article/view/203628
- DOI: https://doi.org/10.1134/S1063782618070163
- ID: 203628
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Abstract
Silicon nanowires are formed on n-Si substrates by chemical etching. p-NiO/n-Si heterostructures are fabricated by reactive magnetron sputtering. The energy diagram of anisotype p-NiO/n-Si heterostructures is constructed according to the Anderson model. The current–voltage and capacitance–voltage characteristics are measured and analyzed. The main current-transport mechanisms through the p-NiO/n-Si heterojunction under forward and reverse biases are established.
About the authors
H. P. Parkhomenko
Yuriy Fedkovych Chernivtsi National University
Author for correspondence.
Email: h.parkhomenko@chnu.edu.ua
Ukraine, Chernivtsi, 58012
M. N. Solovan
Yuriy Fedkovych Chernivtsi National University
Email: h.parkhomenko@chnu.edu.ua
Ukraine, Chernivtsi, 58012
P. D. Maryanchuk
Yuriy Fedkovych Chernivtsi National University
Email: h.parkhomenko@chnu.edu.ua
Ukraine, Chernivtsi, 58012
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