Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase on ncl-Si Growth in an a-SiOx:H matrix (\({{C}_{{{{{\text{O}}}_{{\text{2}}}}}}}\) = 15.5 mol %)

Аннотация

The effect of various operating conditions of time-modulated DC (direct current) plasma on the formation of an amorphous a-SiO_x:H matrix and silicon nanoclusters is studied using IR (infrared) and photoluminescence spectra. DC-plasma modulation consists in repeated (n = 180) switching off and on of the magnetron magnet coil with various time combinations, t_off = 1, 2, 5, 10, 15 s and t_on = 5, 10, 15 s, respectively, at a fixed oxygen concentration (\({{C}_{{{{{\text{O}}}_{{\text{2}}}}}}}\) = 15.5 mol %) in a (SiH₄ + Ar + О₂) gas mixture. The positive effect of self-induction on the formation of both the amorphous matrix and silicon nanoclusters is confirmed. The largest values of x in a-SiO_x:H and photoluminescence intensity are observed in the case of the combination of prolonged plasma residence in the working state (t_on = 10–15 s) and the maximum magnetic-field strength. The effect of t_off on the processes of the formation of both the a-SiO_x:H matrix and silicon nanoclusters is also noted.