Modification of the Ferromagnetic Properties of Si 1 –   x  Mn  x   Thin Films Synthesized by Pulsed Laser Deposition with a Variation in the Buffer-Gas Pressure

O. A. Novodvorsky; V. A. Mikhalevsky; D. S. Gusev; A. A. Lotin; L. S. Parshina; O. D. Khramova; E. A. Cherebylo; A. B. Drovosekov; V. V. Rylkov; S. N. Nikolaev; K. Yu. Chernoglazov; K. I. Maslakov

doi:10.1134/S1063782618110179

Modification of the Ferromagnetic Properties of Si_{1 –}_xMn_x Thin Films Synthesized by Pulsed Laser Deposition with a Variation in the Buffer-Gas Pressure

Авторлар: Novodvorsky O.A.¹, Mikhalevsky V.A.¹, Gusev D.S.¹, Lotin A.A.¹, Parshina L.S.¹, Khramova O.D.¹, Cherebylo E.A.¹, Drovosekov A.B.², Rylkov V.V.³^,4, Nikolaev S.N.³, Chernoglazov K.Y.³, Maslakov K.I.⁵
Мекемелер:
1. Institute of Laser and Information Technologies—Branch of the Federal Scientific Research Center “Crystallography and Photonics”, Russian Academy of Sciences
2. Kapitza Institute for Physical Problems, Russian Academy of Sciences
3. National Research Center “Kurchatov Institute”
4. Fryazino Branch of the Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
5. Moscow State University
Шығарылым: Том 52, № 11 (2018)
Беттер: 1424-1427
Бөлім: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
URL: https://journal-vniispk.ru/1063-7826/article/view/204339
DOI: https://doi.org/10.1134/S1063782618110179
ID: 204339

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A series of thin films of Si_{1 –}_xMn_x alloys with a thickness from 50 to 100 nm grown by pulsed laser deposition on an Al₂O₃ substrate in vacuum and in an argon atmosphere is investigated. The significant effect of the buffer-gas pressure in the sputtering chamber on the structural and magnetic homogeneity of the obtained films is shown. The conditions for the formation of a ferromagnetic phase with a high Curie temperature (>300 K) in the samples are studied. With the use of the Langmuir probe method, the threshold of ablation of a MnSi target by second harmonic radiation (λ = 532 nm) of a Nd:YAG Q-switch laser is determined. The time-of-flight curves for the plume ions are obtained with a change in the energy density at the target and argon pressure in the sputtering chamber. A nonmonotonic dependence of the probe time-of-flight signal amplitude on the argon pressure is established for high-energy particles of the plume.

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Pulsed Laser Deposition (PLD), Ion Plume, Argon Pressure, Sputtering Chamber, Langmuir Probe Method

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Modification of the Ferromagnetic Properties of Si_{1 –}_xMn_x Thin Films Synthesized by Pulsed Laser Deposition with a Variation in the Buffer-Gas Pressure

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Аннотация

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O. Novodvorsky

V. Mikhalevsky

D. Gusev

A. Lotin

L. Parshina

O. Khramova

E. Cherebylo

A. Drovosekov

V. Rylkov

S. Nikolaev

K. Chernoglazov

K. Maslakov

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Modification of the Ferromagnetic Properties of Si1 –xMnx Thin Films Synthesized by Pulsed Laser Deposition with a Variation in the Buffer-Gas Pressure

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Аннотация

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Modification of the Ferromagnetic Properties of Si_{1 –}_xMn_x Thin Films Synthesized by Pulsed Laser Deposition with a Variation in the Buffer-Gas Pressure