Features of the Properties of Rare-Earth Semiconductors


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It is shown that the unique features of the physical properties of rare-earth semiconductor compounds are based on the small values of the ionization potentials of the rare-earth elements included in them. The reason for this is the presence of 4f shells in the electronic structure of the elements.

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V. Kaminski

Ioffe Institute

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Email: Vladimir.kaminski@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

N. Sharenkova

Ioffe Institute

Email: Vladimir.kaminski@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

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