Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation
- 作者: Sitnikov S.V.1, Rodyakina E.E.1,2, Latyshev A.V.1,2
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- 期: 卷 53, 编号 6 (2019)
- 页面: 795-799
- 栏目: Surfaces, Interfaces, and Thin Films
- URL: https://journal-vniispk.ru/1063-7826/article/view/206336
- DOI: https://doi.org/10.1134/S106378261906023X
- ID: 206336
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详细
By means of in situ ultrahigh vacuum reflection electron microscopy, the nucleation of vacancy islands on wide terraces of the Si(100) surface is investigated. The temperature dependence of the displacement of a vacancy island nucleation center is determined in the process of heating a sample with a dc electric current. On the basis of a theoretical model, the effective electric charge of addimers is estimated in the direction across dimer rows of the surface. The effective charge has a positive sign and does not exceed 15 units of the elementary charge in the temperature range of 1020–1120°C.
作者简介
S. Sitnikov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: sitnikov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
E. Rodyakina
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: sitnikov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
A. Latyshev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: sitnikov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
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