Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells
- 作者: Arteev D.S.1, Sakharov A.V.1, Lundin W.V.1, Zavarin E.E.1, Zakheim D.A.1, Tsatsulnikov A.F.2
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隶属关系:
- Ioffe Institute
- SHM R and E Center, Russian Academy of Sciences
- 期: 卷 53, 编号 14 (2019)
- 页面: 1900-1903
- 栏目: Nanostructures Characterization
- URL: https://journal-vniispk.ru/1063-7826/article/view/207510
- DOI: https://doi.org/10.1134/S1063782619140033
- ID: 207510
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详细
The broadening of the spectral linewidth of the GaN/InGaN/GaN quantum wells caused by the random distribution of indium and gallium atoms in the cation sublattice was analyzed theoretically. The calculated values of the full width at half maximum of the emission spectra at low temperature are much smaller than the usually observed experimental values, indicating that the emission linewidth of the InGaN quantum wells is mostly determined by other broadening mechanisms (e.g. indium clustering, quantum well width fluctuations, background impurity broadening, etc.).
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作者简介
D. Arteev
Ioffe Institute
编辑信件的主要联系方式.
Email: ArteevDS@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Sakharov
Ioffe Institute
编辑信件的主要联系方式.
Email: Val@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
W. Lundin
Ioffe Institute
编辑信件的主要联系方式.
Email: Lundin@vpegroup.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
E. Zavarin
Ioffe Institute
编辑信件的主要联系方式.
Email: Ezavarin@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
D. Zakheim
Ioffe Institute
编辑信件的主要联系方式.
Email: Mitya@quantum.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Tsatsulnikov
SHM R and E Center, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: Andrew@beam.ioffe.ru
俄罗斯联邦, St. Petersburg
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