Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

The broadening of the spectral linewidth of the GaN/InGaN/GaN quantum wells caused by the random distribution of indium and gallium atoms in the cation sublattice was analyzed theoretically. The calculated values of the full width at half maximum of the emission spectra at low temperature are much smaller than the usually observed experimental values, indicating that the emission linewidth of the InGaN quantum wells is mostly determined by other broadening mechanisms (e.g. indium clustering, quantum well width fluctuations, background impurity broadening, etc.).

作者简介

D. Arteev

Ioffe Institute

编辑信件的主要联系方式.
Email: ArteevDS@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

A. Sakharov

Ioffe Institute

编辑信件的主要联系方式.
Email: Val@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

W. Lundin

Ioffe Institute

编辑信件的主要联系方式.
Email: Lundin@vpegroup.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

E. Zavarin

Ioffe Institute

编辑信件的主要联系方式.
Email: Ezavarin@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

D. Zakheim

Ioffe Institute

编辑信件的主要联系方式.
Email: Mitya@quantum.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

A. Tsatsulnikov

SHM R and E Center, Russian Academy of Sciences

编辑信件的主要联系方式.
Email: Andrew@beam.ioffe.ru
俄罗斯联邦, St. Petersburg

补充文件

附件文件
动作
1. JATS XML

版权所有 © Pleiades Publishing, Ltd., 2019