The Influence of the Crystal Structure of the GaSb–InAs Matrix on the Formation of InSb Quantum Dots

Аннотация

Uniform arrays of the InSb quantum dots with a surface density of n_QD = 2 × 10⁹ cm^–2 were obtained by liquid phase epitaxy on a matrix layer based on a multicomponent InGaAsSb solid solution lattice-matched with the GaSb substrate. The change in the composition of the cationic part of the matrix by using the epitaxial matrix layer allowed to lower the temperature of the epitaxy to T = 430°C and determined the shape of a typical InSb quantum dot in the form of a truncated cone with average values of height h = 3 nm and diameter d = 30 nm, which corresponded to the aspect ratio L = h/d = 0.1.