| Issue |
Title |
File |
| Vol 51, No 11 (2017) |
Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects |
(Eng)
|
|
Zabavichev I.Y., Obolenskaya E.S., Potekhin A.A., Puzanov A.S., Obolensky S.V., Kozlov V.A.
|
| Vol 51, No 11 (2017) |
Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures |
(Eng)
|
|
Nikiforov V.E., Abramkin D.S., Shamirzaev T.S.
|
| Vol 51, No 11 (2017) |
Optimization of the superlattice parameters for THz diodes |
(Eng)
|
|
Pavelyev D.G., Vasilev A.P., Kozlov V.A., Obolenskaya E.S., Obolensky S.V., Ustinov V.M.
|
| Vol 51, No 11 (2017) |
Effect of the surface on transport phenomena in PbSnTe:In/BaF2 films |
(Eng)
|
|
Akimov A.N., Klimov A.E., Suprun S.P., Epov V.S.
|
| Vol 51, No 11 (2017) |
On the cascade capture of electrons at charged dipoles in weakly compensated semiconductors |
(Eng)
|
|
Aleshkin V.Y., Gavrilenko L.V.
|
| Vol 51, No 11 (2017) |
Long-wavelength sensitivity limit in MBE-grown PbSnTe:In films: Correlation with the film structure and composition |
(Eng)
|
|
Akimov A.N., Klimov A.E., Paschin N.S., Yaroshevich A.S., Savchenko M.L., Epov V.S., Fedosenko E.V.
|
| Vol 51, No 11 (2017) |
Low-temperature deposition of SiNx Films in SiH4/Ar + N2 inductively coupled plasma under high silane dilution with argon |
(Eng)
|
|
Okhapkin A.I., Korolyov S.A., Yunin P.A., Drozdov M.N., Kraev S.A., Khrykin O.I., Shashkin V.I.
|
| Vol 51, No 11 (2017) |
Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates |
(Eng)
|
|
Baidus N.V., Aleshkin V.Y., Dubinov A.A., Kudryavtsev K.E., Nekorkin S.M., Novikov A.V., Pavlov D.A., Rykov A.V., Sushkov A.A., Shaleev M.V., Yunin P.A., Yurasov D.V., Yablonskiy A.N., Krasilnik Z.F.
|
| Vol 51, No 11 (2017) |
Study of the influence of ga as a surfactant during the high-temperature ammonia MBE of AlN layers on the properties of nitride heterostructures |
(Eng)
|
|
Alexeev A.N., Mamaev V.V., Petrov S.I.
|
| Vol 51, No 11 (2017) |
Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures |
(Eng)
|
|
Plankina S.M., Vikhrova O.V., Zvonkov B.N., Nezhdanov A.V., Pashen’kin I.Y.
|
| Vol 51, No 11 (2017) |
Amplification of terahertz radiation in a plasmon n–i–p–i graphene structure with charge-carrier injection |
(Eng)
|
|
Polischuk O.V., Fateev D.V., Popov V.V.
|
| Vol 51, No 11 (2017) |
Optical thyristor based on GaAs/InGaP materials |
(Eng)
|
|
Zvonkov B.N., Baidus N.V., Nekorkin S.M., Vikhrova O.V., Zdoroveyshev A.V., Kudrin A.V., Kotomina V.E.
|
| Vol 51, No 11 (2017) |
Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons |
(Eng)
|
|
Zabavichev I.Y., Potekhin A.A., Puzanov A.S., Obolenskiy S.V., Kozlov V.A.
|
| Vol 51, No 11 (2017) |
Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots |
(Eng)
|
|
Gorshkov A.P., Volkova N.S., Voronin P.G., Zdoroveyshchev A.V., Istomin L.A., Pavlov D.A., Usov Y.V., Levichev S.B.
|
| Vol 51, No 11 (2017) |
MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate |
(Eng)
|
|
Reznik R.R., Kotlyar K.P., Shtrom I.V., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Cirlin G.E.
|
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