| Issue |
Title |
File |
| Vol 52, No 9 (2018) |
Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures |
(Eng)
|
|
Orlov M.L., Volkova N.S., Ivina N.L., Orlov L.K.
|
| Vol 52, No 9 (2018) |
Size-Dependent Optical Properties of Colloidal CdS Quantum Dots Passivated by Thioglycolic Acid |
(Eng)
|
|
Kondratenko T.S., Smirnov M.S., Ovchinnikov O.V., Shabunya-Klyachkovskaya E.V., Matsukovich A.S., Zvyagin A.I., Vinokur Y.A.
|
| Vol 52, No 9 (2018) |
Quantization of the Electromagnetic Field in Three-Dimensional Photonic Structures on the Basis of the Scattering Matrix Formalism (S Quantization) |
(Eng)
|
|
Ivanov K.A., Gubaydullin A.R., Kaliteevski M.A.
|
| Vol 52, No 9 (2018) |
Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface |
(Eng)
|
|
Smagina Z.V., Zinovyev V.A., Krivyakin G.K., Rodyakina E.E., Kuchinskaya P.A., Fomin B.I., Yablonskiy A.N., Stepikhova M.V., Novikov A.V., Dvurechenskii A.V.
|
| Vol 52, No 9 (2018) |
On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures |
(Eng)
|
|
Kolodeznyi E.S., Kurochkin A.S., Rochas S.S., Babichev A.V., Novikov I.I., Gladyshev A.G., Karachinsky L.Y., Savelyev A.V., Egorov A.Y., Denisov D.V.
|
| Vol 52, No 8 (2018) |
Nonlinear Optical Properties of CdS/ZnS Quantum Dots in a High-Molecular-Weight Polyvinylpyrrolidone Matrix |
(Eng)
|
|
Kulagina A.S., Evstropiev S.K., Rosanov N.N., Vlasov V.V.
|
| Vol 52, No 8 (2018) |
Specific Features of the Electrochemical Capacitance–Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions |
(Eng)
|
|
Yakovlev G.E., Dorokhin M.V., Zubkov V.I., Dudin A.L., Zdoroveyshchev A.V., Malysheva E.I., Danilov Y.A., Zvonkov B.N., Kudrin A.V.
|
| Vol 52, No 8 (2018) |
Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy |
(Eng)
|
|
Seredin P.V., Goloshchapov D.L., Zolotukhin D.S., Lenshin A.S., Lukin A.N., Khudyakov Y.Y., Arsentyev I.N., Zhabotinsky A.V., Nikolaev D.N., Pikhtin N.A.
|
| Vol 52, No 8 (2018) |
Photoluminescence of ZnS:Cu in a Polymethyl Methacrylate Matrix |
(Eng)
|
|
Smagin V.P., Eremina N.S., Leonov M.S.
|
| Vol 52, No 8 (2018) |
Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si〈Mn〉–Au |
(Eng)
|
|
Zainabidinov S., Tursunov I.G., Khimmatkulov O.
|
| Vol 52, No 8 (2018) |
Simulating Tunneling Electron Transport in the Semiconductor–Crystalline Insulator–Si(111) System |
(Eng)
|
|
Vexler M.I.
|
| Vol 52, No 8 (2018) |
Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW |
(Eng)
|
|
Mikhailova M.P., Andreev I.A., Konovalov G.G., Danilov L.V., Ivanov E.V., Kunitsyna E.V., Il’inskaya N.D., Levin R.V., Pushnyi B.V., Yakovlev Y.P.
|
| Vol 52, No 7 (2018) |
Ultrafast Dynamics of Photoexcited Charge Carriers in In0.53Ga0.47As/In0.52Al0.48As Superlattices under Femtosecond Laser Excitation |
(Eng)
|
|
Ponomarev D.S., Khabibullin R.A., Klochkov A.N., Yachmenev A.E., Bugaev A.S., Khusyainov D.I., Buriakov A.M., Bilyk V.P., Mishina E.D.
|
| Vol 52, No 7 (2018) |
In0.8Ga0.2As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties |
(Eng)
|
|
Salii R.A., Kosarev I.S., Mintairov S.A., Nadtochiy A.M., Shvarts M.Z., Kalyuzhnyy N.A.
|
| Vol 52, No 7 (2018) |
Experimental Study of Spontaneous Emission in Bragg Multiple- Quantum-Well Structures with InAs Single-Layer Quantum Wells |
(Eng)
|
|
Kaliteevski M.A., Nikitina E.V., Gubaidullin A.R., Ivanov K.A., Egorov A.Y., Pozina G.
|
| Vol 52, No 7 (2018) |
Transverse Nernst–Ettingshausen Effect in Superlattices Upon Electron-Phonon Scattering |
(Eng)
|
|
Figarova S.R., Huseynov H.I., Figarov V.R.
|
| Vol 52, No 7 (2018) |
Electrical Properties of p-NiO/n-Si Heterostructures Based on Nanostructured Silicon |
(Eng)
|
|
Parkhomenko H.P., Solovan M.N., Maryanchuk P.D.
|
| Vol 52, No 6 (2018) |
Study of the Structural and Luminescence Properties of InAs/GaAs Heterostructures with Bi-Doped Potential Barriers |
(Eng)
|
|
Pashchenko A.S., Lunin L.S., Chebotarev S.N., Lunina M.L.
|
| Vol 52, No 6 (2018) |
X-Ray Diffraction Analysis of Features of the Crystal Structure of GaN/Al0.32Ga0.68N HEMT-Heterostructures by the Williamson–Hall Method |
(Eng)
|
|
Pushkarev S.S., Grekhov M.M., Zenchenko N.V.
|
| Vol 52, No 6 (2018) |
Quantum Oscillations of Photoconductivity Relaxation in p–i–n GaAs/InAs/AlAs Heterodiodes |
(Eng)
|
|
Khanin Y.N., Vdovin E.E.
|
| Vol 52, No 6 (2018) |
Heterostructures of Single-Wavelength and Dual-Wavelength Quantum-Cascade Lasers |
(Eng)
|
|
Babichev A.V., Kurochkin A.S., Kolodeznyi E.C., Filimonov A.V., Usikova A.A., Nevedomsky V.N., Gladyshev A.G., Karachinsky L.Y., Novikov I.I., Egorov A.Y.
|
| Vol 52, No 6 (2018) |
Study of the Properties of II–VI and III–V Semiconductor Quantum Dots |
(Eng)
|
|
Mikhailov A.I., Kabanov V.F., Gorbachev I.A., Glukhovsky E.G.
|
| Vol 52, No 2 (2018) |
Electron Transport in PHEMT AlGaAs/InGaAs/GaAs Quantum Wells at Different Temperatures: Influence of One-Side δ-Si Doping |
(Eng)
|
|
Safonov D.A., Vinichenko A.N., Kargin N.I., Vasil’evskii I.S.
|
| Vol 52, No 2 (2018) |
Intraband Radiation Absorption by Holes in InAsSb/AlSb and InGaAsP/InP Quantum Wells |
(Eng)
|
|
Pavlov N.V., Zegrya G.G., Zegrya A.G., Bugrov V.E.
|
| Vol 52, No 1 (2018) |
Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various δ–n-Layer Profile Widths |
(Eng)
|
|
Protasov D.Y., Bakarov A.K., Toropov A.I., Ber B.Y., Kazantsev D.Y., Zhuravlev K.S.
|
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