| Issue |
Title |
File |
| Vol 51, No 9 (2017) |
Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes |
(Eng)
|
|
Royz M.A., Baranov A.N., Imenkov A.N., Burenina D.S., Pivovarova A.A., Monakhov A.M., Grebenshchikova E.A., Yakovlev Y.P.
|
| Vol 51, No 9 (2017) |
High-voltage MIS-gated GaN transistors |
(Eng)
|
|
Erofeev E.V., Fedin I.V., Fedina V.V., Stepanenko M.V., Yuryeva A.V.
|
| Vol 51, No 9 (2017) |
Derivation of an analytical expression for a physical process from an experimental curve with kinks |
(Eng)
|
|
Davydov V.N., Kharitonov S.V., Lugina N.E., Melnik K.P.
|
| Vol 51, No 8 (2017) |
Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers |
(Eng)
|
|
Mnatsakanov T.T., Tandoev A.G., Levinshtein M.E., Yurkov S.N., Palmour J.W.
|
| Vol 51, No 7 (2017) |
Varistor effect in highly heterogeneous polymer–ZnO systems |
(Eng)
|
|
Kurbanov M.A., Ahadzade S.M., Ramazanova I.S., Dadashov Z.A., Faradzhzade I.A.
|
| Vol 51, No 7 (2017) |
Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers |
(Eng)
|
|
Sokolova Z.N., Veselov D.A., Pikhtin N.A., Tarasov I.S., Asryan L.V.
|
| Vol 51, No 7 (2017) |
Utilizing nanotechnology and novel materials and concepts for advanced thermoelectric and thermal management technology development |
(Eng)
|
|
Mori T.
|
| Vol 51, No 6 (2017) |
n-ZnO/p-CuI barrier heterostructure based on zinc-oxide nanoarrays formed by pulsed electrodeposition and SILAR copper-iodide films |
(Eng)
|
|
Klochko N.P., Kopach V.P., Khrypunov G.S., Korsun V.E., Volkova N.D., Lyubov V.N., Kirichenko M.V., Kopach A.V., Zhadan D.O., Otchenashko A.N.
|
| Vol 51, No 6 (2017) |
On the limit of the injection ability of silicon p+–n junctions as a result of fundamental physical effects |
(Eng)
|
|
Mnatsakanov T.T., Levinshtein M.E., Shuman V.B., Seredin B.M.
|
| Vol 51, No 6 (2017) |
Simulation of reversely switched dynistors in modes with a lowered primary-ignition threshold |
(Eng)
|
|
Gorbatyuk A.V., Ivanov B.V.
|
| Vol 51, No 5 (2017) |
Laser (λ = 809 nm) power converter based on GaAs |
(Eng)
|
|
Khvostikov V.P., Sorokina S.V., Potapovich N.S., Khvostikova O.A., Timoshina N.K.
|
| Vol 51, No 5 (2017) |
Study of the voltage drop process for the case of high-power thyristors switched in the impact-ionization mode |
(Eng)
|
|
Gusev A.I., Lyubutin S.K., Rukin S.N., Tsyranov S.N.
|
| Vol 51, No 5 (2017) |
Experimental and theoretical studies of the characteristics of position-sensitive photodetectors based on n-CdSe/mica epitaxial layers |
(Eng)
|
|
Senokosov E.A., Chukita V.I., Khamidullin R.A., Cheban V.N., Odin I.N., Chukichev M.V.
|
| Vol 51, No 5 (2017) |
On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates |
(Eng)
|
|
Aleshkin V.Y., Baidus N.V., Dubinov A.A., Krasilnik Z.F., Nekorkin S.M., Novikov A.V., Rykov A.V., Yurasov D.V., Yablonskiy A.N.
|
| Vol 51, No 5 (2017) |
Formation of a p-type emitter with the involvement of surfactants in GaAs photoelectric converters |
(Eng)
|
|
Karlina L.B., Vlasov A.S., Ber B.Y., Kazantsev D.Y., Timoshina N.K., Kulagina M.M., Smirnov A.B.
|
| Vol 51, No 4 (2017) |
Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation |
(Eng)
|
|
Ponomarev D.S., Khabibullin R.A., Yachmenev A.E., Maltsev P.P., Grekhov M.M., Ilyakov I.E., Shishkin B.V., Akhmedzhanov R.A.
|
| Vol 51, No 4 (2017) |
Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme |
(Eng)
|
|
Khabibullin R.A., Shchavruk N.V., Klochkov A.N., Glinskiy I.A., Zenchenko N.V., Ponomarev D.S., Maltsev P.P., Zaycev A.A., Zubov F.I., Zhukov A.E., Cirlin G.E., Alferov Z.I.
|
| Vol 51, No 4 (2017) |
Optimization of vertical cavity lasers with intracavity metal layers |
(Eng)
|
|
Lazarenko A.A., Ivanov K.A., Gubaydullin A.R., Kaliteevski M.A.
|
| Vol 51, No 4 (2017) |
Polarization-modulation diagnostics of thermal stresses in an integrated pressure transducer |
(Eng)
|
|
Mikhailenko I.V., Orlov A.T., Serdega B.K.
|
| Vol 51, No 4 (2017) |
Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates |
(Eng)
|
|
Galiev G.B., Pushkarev S.S., Buriakov A.M., Bilyk V.R., Mishina E.D., Klimov E.A., Vasil’evskii I.S., Maltsev P.P.
|
| Vol 51, No 3 (2017) |
Specific features of the capacitance–voltage characteristics of a Cu–SiO2–p-InSb MIS structure |
(Eng)
|
|
Aliev R.A., Gajiev G.M., Gadzhialiev M.M., Ismailov A.M., Pirmagomedov Z.S.
|
| Vol 51, No 3 (2017) |
A study of deep centers in microplasma channels in GaP light-emitting diodes with green-emission spectrum |
(Eng)
|
|
Ionychev V.K., Shesterkina A.A.
|
| Vol 51, No 3 (2017) |
Current–voltage characteristics of high-voltage 4H-SiC p+–n0–n+ diodes in the avalanche breakdown mode |
(Eng)
|
|
Ivanov P.A., Potapov A.S., Samsonova T.P., Grekhov I.V.
|
| Vol 51, No 3 (2017) |
AlN/GaN heterostructures for normally-off transistors |
(Eng)
|
|
Zhuravlev K.S., Malin T.V., Mansurov V.G., Tereshenko O.E., Abgaryan K.K., Reviznikov D.L., Zemlyakov V.E., Egorkin V.I., Parnes Y.M., Tikhomirov V.G., Prosvirin I.P.
|
| Vol 51, No 2 (2017) |
Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors |
(Eng)
|
|
Yurkov S.N., Mnatsakanov T.T., Levinshtein M.E., Tandoev A.G., Palmour J.W.
|
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