Review

Edição	Título	Arquivo
Volume 53, Nº 3 (2019)	Discovery of III–V Semiconductors: Physical Properties and Application	(Eng)
Mikhailova M., Moiseev K., Yakovlev Y.
Volume 53, Nº 2 (2019)	Indium Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later)	(Eng)
Karandashev S., Matveev B., Remennyi M.
Volume 51, Nº 10 (2017)	Anisotropic Jahn–Teller acceptors formed in GaAs by first-group elements with a filled d shell	(Eng)
Gutkin A., Averkiev N.
Volume 51, Nº 10 (2017)	Tight-binding simulation of silicon and germanium nanocrystals	(Eng)
Gert A., Nestoklon M., Prokofiev A., Yassievich I.
Volume 50, Nº 1 (2016)	Exciton emission of crystalline Zn(S)Se thin films arranged in microcavities based on amorphous insulating coatings	(Eng)
Kozlovsky V., Krivobok V., Kuznetsov P., Nikolaev S., Onistchenko E., Pruchkina A., Timiryazev A., Chentsov S.
Volume 50, Nº 1 (2016)	Simulation of the β-voltaic effect in silicon pin structures irradiated with electrons from a nickel-63 β source	(Eng)
Nagornov Y., Murashev V.
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