| Шығарылым |
Атауы |
Файл |
| Том 53, № 13 (2019) |
Effect of Deposition Time on Structural, Morphological and Optical Properties of PVA Capped SnS Films Grown by CBD Process |
(Eng)
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Devi P., Reddy G., Reddy K.
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| Том 53, № 11 (2019) |
Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions |
(Eng)
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Cherkova S., Skuratov V., Volodin V.
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| Том 53, № 4 (2019) |
Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies |
(Eng)
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Bazhenov N., Mynbaev K., Semakova A., Zegrya G.
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| Том 53, № 3 (2019) |
Luminescence of (ZnSe:Al):Yb Сrystals at 4.2 K |
(Eng)
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Makhniy V., Vakhnyak N., Kinzerska O., Pyryatynsky Y.
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| Том 53, № 2 (2019) |
Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions |
(Eng)
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Sobolev N., Kalyadin A., Sakharov V., Serenkov I., Shek E., Parshin E., Melesov N., Simakin C.
|
| Том 52, № 13 (2018) |
Intracenter Radiative Transitions at Tantalum Impurity Centers in Cadmium Telluride |
(Eng)
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Ushakov V., Aminev D., Krivobok V.
|
| Том 52, № 10 (2018) |
Formation of Luminescence Spectra and Emission Intensity in the UV and Visible Spectral Regions for n-ZnO/p-GaN and n-ZnO/p-ZnO Structures when Depositing ZnO Films by High-Frequency Magnetron Sputtering |
(Eng)
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Mezdrogina M., Vinogradov A., Kozhanova Y.
|
| Том 52, № 10 (2018) |
Luminescence and Stimulated Emission of Polycrystalline Cu(In,Ga)Se2 Films Deposited by Magnetron-Assisted Sputtering |
(Eng)
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Svitsiankou I., Pavlovskii V., Lutsenko E., Yablonskii G., Shiripov V., Khokhlov E., Mudryi A., Zhivulko V., Borodavchenko O., Yakushev M.
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| Том 52, № 9 (2018) |
Calculation of the Influence of the Ion Current Density and Temperature on the Accumulation Kinetics of Point Defects under the Irradiation of Si with Light Ions |
(Eng)
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Okulich E., Okulich V., Tetelbaum D.
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| Том 52, № 9 (2018) |
Optical Properties and the Mechanism of the Formation of V2O2 and V3O2 Vacancy–Oxygen Complexes in Irradiated Silicon Crystals |
(Eng)
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Tolkacheva E., Markevich V., Murin L.
|
| Том 52, № 7 (2018) |
Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si+ Ion Implantation |
(Eng)
|
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Tereshchenko A., Korolev D., Mikhaylov A., Belov A., Nikolskaya A., Pavlov D., Tetelbaum D., Steinman E.
|
| Том 52, № 7 (2018) |
Photoreflectance Spectroscopy Study of LT-GaAs Layers Grown on Si and GaAs Substrates |
(Eng)
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Avakyants L., Bokov P., Kazakov I., Bazalevsky M., Deev P., Chervyakov A.
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| Том 52, № 6 (2018) |
Rb1 – xCsxNO3 (x = 0.025, 0.05, 0.1) Single Crystals and Their High-Temperature X-Ray Study |
(Eng)
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Haziyeva A., Nasirov V., Asadov Y., Aliyev Y., Jabarov S.
|
| Том 52, № 6 (2018) |
Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices: Experiment and Calculations |
(Eng)
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Volodin V., Sachkov V., Sinyukov M.
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| Том 52, № 2 (2018) |
Investigation of the Far-IR Reflection Spectra of SmS Single Crystals and Polycrystals in the Homogeneity Range |
(Eng)
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Ulashkevich Y., Kaminskiy V., Romanova M., Sharenkova N.
|
| Том 52, № 2 (2018) |
Effect of Heat and Plasma Treatments on the Photoluminescence of Zinc-Oxide Films |
(Eng)
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Abdullin K., Gritsenko L., Kumekov S., Markhabaeva A., Terukov E.
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| Том 52, № 1 (2018) |
Infrared Reflection Spectra of Pb1–xSnxSe (x = 0.2, 0.34) Topological Insulator Films on a ZnTe/GaAs Substrate and the Vibrational Modes of Multilayer Structures |
(Eng)
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Novikova N., Yakovlev V., Kucherenko I., Vinogradov V., Aleschenko Y., Muratov A., Karczewski G., Chusnutdinow S.
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| Том 51, № 10 (2017) |
Reflectance spectra of p-Bi2Te3:Sn crystals in a wide IR region |
(Eng)
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Nemov S., Ulashkevich Y., Allahkhah A.
|
| Том 51, № 8 (2017) |
Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers |
(Eng)
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Lebedev A., Ber B., Oganesyan G., Belov S., Lebedev S., Nikitina I., Seredova N., Shakhov L., Kozlovski V.
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| Том 51, № 5 (2017) |
Optical an photoelectric properties odf ZnSe:Ti crystals |
(Eng)
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Nitsuk Y., Vaksman Y.
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| Том 51, № 5 (2017) |
Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir–Blodgett method |
(Eng)
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Zarubanov A., Plyusnin V., Zhuravlev K.
|
| Том 51, № 3 (2017) |
Radiative d–d transitions at tungsten centers in II–VI semiconductors |
(Eng)
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Ushakov V., Krivobok V., Pruchkina A.
|
| Том 51, № 3 (2017) |
Effect of H+ implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region |
(Eng)
|
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Klyui N., Lozinskii V., Liptuga A., Dikusha V., Oksanych A., Kogdas’ M., Perekhrest A., Pritchin S.
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| Том 51, № 3 (2017) |
Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates |
(Eng)
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Galiev G., Grekhov M., Kitaeva G., Klimov E., Klochkov A., Kolentsova O., Kornienko V., Kuznetsov K., Maltsev P., Pushkarev S.
|
| Том 51, № 3 (2017) |
Effect of temperature and doping with Cu on the reflectance spectra of PbSb2Te4 crystals |
(Eng)
|
|
Nemov S., Ulashkevich Y.
|
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