| Выпуск |
Название |
Файл |
| Том 53, № 10 (2019) |
Features of the Simultaneous Generation of Low-Q and High-Q Modes in Heterolasers Based on Quantum Dots with a Long Incoherent Relaxation Time of Optical Dipole Oscillations |
(Eng)
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Kocharovskaya E., Mishin A., Ryabinin I., Kocharovsky V.
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| Том 53, № 10 (2019) |
Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots |
(Eng)
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Derebezov I., Gaisler V., Gaisler A., Dmitriev D., Toropov A., von Helversen M., de la Haye C., Bounouar S., Reitzenstein S.
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| Том 53, № 10 (2019) |
Coherence Dynamics of the Exciton-Polariton System in GaAs Microcavities under Pulse Resonant Photoexcitation |
(Eng)
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Kulakovskii V., Demenev A.
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| Том 53, № 10 (2019) |
Interaction of a Tamm Plasmon and Exciton in an Organic Material in the Strong Coupling Mode |
(Eng)
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Morozov K., Belonovskii A., Ivanov K., Girshova E., Kaliteevski M.
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| Том 53, № 10 (2019) |
Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates |
(Eng)
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Novikov A., Yurasov D., Baidakova N., Bushuykin P., Andreev B., Yunin P., Drozdov M., Yablonskiy A., Kalinnikov M., Krasilnik Z.
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| Том 53, № 10 (2019) |
Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics |
(Eng)
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Yurasov D., Baidakova N., Verbus V., Gusev N., Mashin A., Morozova E., Nezhdanov A., Novikov A., Skorohodov E., Shengurov D., Yablonskiy A.
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| Том 53, № 10 (2019) |
Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals |
(Eng)
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Smagina Z., Zinovyev V., Rodyakina E., Fomin B., Stepikhova M., Yablonskiy A., Gusev S., Novikov A., Dvurechenskii A.
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| Том 53, № 10 (2019) |
On the Intracenter Relaxation of Shallow Antimony Donors in Strained Germanium |
(Eng)
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Tsyplenkov V., Shastin V.
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| Том 53, № 10 (2019) |
On the Two-Phonon Relaxation of Excited States of Boron Acceptors in Diamond |
(Eng)
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Bekin N.
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| Том 53, № 10 (2019) |
Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers |
(Eng)
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Arkhipova E., Demidov E., Drozdov M., Kraev S., Shashkin V., Lobaev M., Vikharev A., Gorbachev A., Radishchev D., Isaev V., Bogdanov S.
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| Том 53, № 10 (2019) |
Comparison of the Radiation Resistance of Prospective Bipolar and Heterobipolar Transistors |
(Eng)
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Shobolova T., Korotkov A., Petryakova E., Lipatnikov A., Puzanov A., Obolensky S., Kozlov V.
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| Том 53, № 10 (2019) |
Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers |
(Eng)
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Andreev B., Lobanov D., Krasil’nikova L., Bushuykin P., Yablonskiy A., Novikov A., Davydov V., Yunin P., Kalinnikov M., Skorohodov E., Krasil’nik Z.
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| Том 53, № 10 (2019) |
Residual-Photoconductivity Spectra in HgTe/CdHgTe Quantum-Well Heterostructures |
(Eng)
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Spirin K., Gaponova D., Gavrilenko V., Mikhailov N., Dvoretsky S.
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| Том 53, № 10 (2019) |
Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction |
(Eng)
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Vostokov N., Daniltsev V., Kraev S., Krukov V., Skorokhodov E., Strelchenko S., Shashkin V.
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| Том 53, № 10 (2019) |
2D Bragg Resonators Based on Planar Dielectric Waveguides (from Theory to Model-Based Testing) |
(Eng)
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Ginzburg N., Peskov N., Zaslavsky V., Kocharovskaya E., Malkin A., Sergeev A., Baryshev V., Proyavin M., Sobolev D.
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| Том 53, № 10 (2019) |
On the Asymmetric Generation of a Superradiant Laser with a Symmetric Low-Q Cavity |
(Eng)
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Kocharovsky V., Kukushkin V., Tarasov S., Kocharovskaya E., Kocharovsky V.
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| Том 53, № 9 (2019) |
Second-Harmonic Generation of Subterahertz Gyrotron Radiation by Frequency Doubling in InP:Fe and Its Application for Magnetospectroscopy of Semiconductor Structures |
(Eng)
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Rumyantsev V., Maremyanin K., Fokin A., Dubinov A., Utochkin V., Glyavin M., Mikhailov N., Dvoretskii S., Morozov S., Gavrilenko V.
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| Том 53, № 9 (2019) |
Computational and Experimental Simulation of Static Memory Cells of Submicron Microcircuits under the Effect of Neutron Fluxes |
(Eng)
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Puzanov A., Venediktov M., Obolenskiy S., Kozlov V.
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| Том 53, № 9 (2019) |
GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates |
(Eng)
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Abramkin D., Petrushkov M., Putyato M., Semyagin B., Emelyanov E., Preobrazhenskii V., Gutakovskii A., Shamirzaev T.
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| Том 53, № 9 (2019) |
On the Spin States of Electrons in a Double Quantum Dot in a Two-Dimensional Topological Insulator with Spin-Orbit Interaction |
(Eng)
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Sukhanov A., Sablikov V.
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| Том 53, № 9 (2019) |
Semiconductor Heterolasers with Double-Mirror Two-Dimensional Bragg Resonators |
(Eng)
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Baryshev V., Ginzburg N., Zaslavsky V., Malkin A.
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| Том 53, № 9 (2019) |
Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission |
(Eng)
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Shastin V., Zhukavin R., Kovalevsky K., Tsyplenkov V., Rumyantsev V., Shengurov D., Pavlov S., Shuman V., Portsel L., Lodygin A., Astrov Y., Abrosimov N., Klopf J., Hübers H.
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| Том 53, № 9 (2019) |
Study of the Auger Recombination Energy Threshold in a Series of Waveguide Heterostructures with HgTe/Cd0.7Hg0.3Te QWs Near 14 μm |
(Eng)
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Utochkin V., Aleshkin V., Dubinov A., Gavrilenko V., Kulikov N., Fadeev M., Rumyantsev V., Mikhailov N., Dvoretskii S., Morozov S.
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| Том 53, № 9 (2019) |
Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition |
(Eng)
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Shengurov V., Filatov D., Denisov S., Chalkov V., Alyabina N., Zaitsev A.
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| Том 53, № 9 (2019) |
In-situ Doping of Thermoelectric Materials Based on SiGe Solid Solutions during Their Synthesis by the Spark Plasma Sintering Technique |
(Eng)
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Dorokhin M., Demina P., Erofeeva I., Zdoroveyshchev A., Kuznetsov Y., Boldin M., Popov A., Lantsev E., Boryakov A.
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