| Issue |
Title |
File |
| Vol 53, No 10 (2019) |
Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates |
(Eng)
|
|
Novikov A.V., Yurasov D.V., Baidakova N.A., Bushuykin P.A., Andreev B.A., Yunin P.A., Drozdov M.N., Yablonskiy A.N., Kalinnikov M.A., Krasilnik Z.F.
|
| Vol 53, No 10 (2019) |
Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics |
(Eng)
|
|
Yurasov D.V., Baidakova N.A., Verbus V.A., Gusev N.S., Mashin A.I., Morozova E.E., Nezhdanov A.V., Novikov A.V., Skorohodov E.V., Shengurov D.V., Yablonskiy A.N.
|
| Vol 53, No 10 (2019) |
Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals |
(Eng)
|
|
Smagina Z.V., Zinovyev V.A., Rodyakina E.E., Fomin B.I., Stepikhova M.V., Yablonskiy A.N., Gusev S.A., Novikov A.V., Dvurechenskii A.V.
|
| Vol 53, No 10 (2019) |
On the Intracenter Relaxation of Shallow Antimony Donors in Strained Germanium |
(Eng)
|
|
Tsyplenkov V.V., Shastin V.N.
|
| Vol 53, No 10 (2019) |
On the Two-Phonon Relaxation of Excited States of Boron Acceptors in Diamond |
(Eng)
|
|
Bekin N.A.
|
| Vol 53, No 10 (2019) |
Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers |
(Eng)
|
|
Arkhipova E.A., Demidov E.V., Drozdov M.N., Kraev S.A., Shashkin V.I., Lobaev M.A., Vikharev A.L., Gorbachev A.M., Radishchev D.B., Isaev V.A., Bogdanov S.A.
|
| Vol 53, No 10 (2019) |
Comparison of the Radiation Resistance of Prospective Bipolar and Heterobipolar Transistors |
(Eng)
|
|
Shobolova T.A., Korotkov A.V., Petryakova E.V., Lipatnikov A.V., Puzanov A.S., Obolensky S.V., Kozlov V.A.
|
| Vol 53, No 10 (2019) |
Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers |
(Eng)
|
|
Andreev B.A., Lobanov D.N., Krasil’nikova L.V., Bushuykin P.A., Yablonskiy A.N., Novikov A.V., Davydov V.Y., Yunin P.A., Kalinnikov M.I., Skorohodov E.V., Krasil’nik Z.F.
|
| Vol 53, No 10 (2019) |
Residual-Photoconductivity Spectra in HgTe/CdHgTe Quantum-Well Heterostructures |
(Eng)
|
|
Spirin K.E., Gaponova D.M., Gavrilenko V.I., Mikhailov N.N., Dvoretsky S.A.
|
| Vol 53, No 10 (2019) |
Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction |
(Eng)
|
|
Vostokov N.V., Daniltsev V.M., Kraev S.A., Krukov V.L., Skorokhodov E.V., Strelchenko S.S., Shashkin V.I.
|
| Vol 53, No 10 (2019) |
2D Bragg Resonators Based on Planar Dielectric Waveguides (from Theory to Model-Based Testing) |
(Eng)
|
|
Ginzburg N.S., Peskov N.Y., Zaslavsky V.Y., Kocharovskaya E.R., Malkin A.M., Sergeev A.S., Baryshev V.R., Proyavin M.D., Sobolev D.I.
|
| Vol 53, No 10 (2019) |
On the Asymmetric Generation of a Superradiant Laser with a Symmetric Low-Q Cavity |
(Eng)
|
|
Kocharovsky V.V., Kukushkin V.A., Tarasov S.V., Kocharovskaya E.R., Kocharovsky V.V.
|
| Vol 53, No 10 (2019) |
Features of the Simultaneous Generation of Low-Q and High-Q Modes in Heterolasers Based on Quantum Dots with a Long Incoherent Relaxation Time of Optical Dipole Oscillations |
(Eng)
|
|
Kocharovskaya E.R., Mishin A.V., Ryabinin I.S., Kocharovsky V.V.
|
| Vol 53, No 10 (2019) |
Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots |
(Eng)
|
|
Derebezov I.A., Gaisler V.A., Gaisler A.V., Dmitriev D.V., Toropov A.I., von Helversen M., de la Haye C., Bounouar S., Reitzenstein S.
|
| Vol 53, No 10 (2019) |
Coherence Dynamics of the Exciton-Polariton System in GaAs Microcavities under Pulse Resonant Photoexcitation |
(Eng)
|
|
Kulakovskii V.D., Demenev A.A.
|
| Vol 53, No 10 (2019) |
Interaction of a Tamm Plasmon and Exciton in an Organic Material in the Strong Coupling Mode |
(Eng)
|
|
Morozov K.M., Belonovskii A.V., Ivanov K.A., Girshova E.I., Kaliteevski M.A.
|
| Vol 53, No 9 (2019) |
Study of the Auger Recombination Energy Threshold in a Series of Waveguide Heterostructures with HgTe/Cd0.7Hg0.3Te QWs Near 14 μm |
(Eng)
|
|
Utochkin V.V., Aleshkin V.Y., Dubinov A.A., Gavrilenko V.I., Kulikov N.S., Fadeev M.A., Rumyantsev V.V., Mikhailov N.N., Dvoretskii S.A., Morozov S.V.
|
| Vol 53, No 9 (2019) |
Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition |
(Eng)
|
|
Shengurov V.G., Filatov D.O., Denisov S.A., Chalkov V.Y., Alyabina N.A., Zaitsev A.V.
|
| Vol 53, No 9 (2019) |
In-situ Doping of Thermoelectric Materials Based on SiGe Solid Solutions during Their Synthesis by the Spark Plasma Sintering Technique |
(Eng)
|
|
Dorokhin M.V., Demina P.B., Erofeeva I.V., Zdoroveyshchev A.V., Kuznetsov Y.M., Boldin M.S., Popov A.A., Lantsev E.A., Boryakov A.V.
|
| Vol 53, No 9 (2019) |
Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate |
(Eng)
|
|
Sushkov A.A., Pavlov D.A., Shengurov V.G., Denisov S.A., Chalkov V.Y., Baidus N.V., Rykov A.V., Kryukov R.N.
|
| Vol 53, No 9 (2019) |
Lateral Energy Transfer by Plasmons Excited by a Terahertz Wave in a Periodic Spatially Asymmetric Graphene Structure |
(Eng)
|
|
Fateev D.V., Mashinsky K.V., Moiseenko I.M., Popov V.V.
|
| Vol 53, No 9 (2019) |
Numerical Simulation of the Current–Voltage Characteristics of Bilayer Resistive Memory Based on Non-Stoichiometric Metal Oxides |
(Eng)
|
|
Umnyagin G.M., Degtyarov V.E., Obolenskiy S.V.
|
| Vol 53, No 9 (2019) |
On the Suppression of Electron-Hole Exchange Interaction in a Reservoir of Nonradiative Excitons |
(Eng)
|
|
Eliseev S.A., Lovtcius V.A., Trifonov A.V., Ignatiev I.V., Kavokin K.V., Kavokin A.V., Shapochkin P.Y., Efimov Y.P.
|
| Vol 53, No 9 (2019) |
Simulation of the Formation of a Cascade of Displacements and Transient Ionization Processes in Silicon Semiconductor Structures under Neutron Exposure |
(Eng)
|
|
Zabavichev I.Y., Potehin A.A., Puzanov A.S., Obolenskiy S.V., Kozlov V.A.
|
| Vol 53, No 9 (2019) |
Hyperfine Interaction and Shockley–Read–Hall Recombination in Semiconductors |
(Eng)
|
|
Ivchenko E.L., Kalevich V.K., Kunold A., Balocchi A., Marie X., Amand T.
|
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