作者的详细信息
Bugaev, A. S.
| 期 | 栏目 | 标题 | 文件 |
| 卷 50, 编号 13 (2016) | Methods and Technique of Measurements | Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs(100) heterostructure by transmission electron microscopy | |
| 卷 52, 编号 7 (2018) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Ultrafast Dynamics of Photoexcited Charge Carriers in In0.53Ga0.47As/In0.52Al0.48As Superlattices under Femtosecond Laser Excitation | |
| 卷 53, 编号 8 (2019) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Energy Expenditure Upon the Formation of the Elastically Stressed State in the Layers of a Step-Graded Metamorphic Buffer in a Heterostructure Grown on a (001) GaAs Substrate |