Информация об авторе

Lebedev, A. A.

Выпуск	Раздел	Название	Файл
Том 50, № 7 (2016)	Carbon Systems	Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6H-SiC (000\(\bar 1\)) in vacuum
Том 51, № 3 (2017)	Electronic Properties of Semiconductors	Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers
Том 51, № 8 (2017)	Spectroscopy, Interaction with Radiation	Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers
Том 51, № 8 (2017)	Carbon Systems	Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)
Том 52, № 3 (2018)	Electronic Properties of Semiconductors	Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers
Том 52, № 11 (2018)	Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018	MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer
Том 52, № 12 (2018)	Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors	Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates
Том 52, № 12 (2018)	Carbon Systems	Transition between Electron Localization and Antilocalization and Manifestation of the Berry Phase in Graphene on a SiC Surface
Том 52, № 12 (2018)	Physics of Semiconductor Devices	Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects
Том 52, № 13 (2018)	Physics of Semiconductor Devices	Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Particles
Том 52, № 14 (2018)	Graphene	High Quality Graphene Grown by Sublimation on 4H-SiC (0001)
Том 53, № 7 (2019)	Physics of Semiconductor Devices	Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons
Том 53, № 10 (2019)	Physics of Semiconductor Devices	Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes
Том 53, № 12 (2019)	Electronic Properties of Semiconductors	Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs
Том 53, № 14 (2019)	Nanostructures Characterization	Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC

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