| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 2 (2016) |
Physics of Semiconductor Devices |
Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation |
|
| 卷 50, 编号 9 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs |
|
| 卷 50, 编号 10 (2016) |
Physics of Semiconductor Devices |
effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis |
|
| 卷 50, 编号 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells |
|
| 卷 51, 编号 1 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
InGaN/GaN light-emitting diode microwires of submillimeter length |
|
| 卷 52, 编号 1 (2018) |
Physics of Semiconductor Devices |
Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells |
|
| 卷 52, 编号 10 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography |
|
| 卷 52, 编号 14 (2018) |
Nanostructure Devices |
Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs |
|
| 卷 53, 编号 14 (2019) |
Nanostructures Characterization |
Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells |
|
| 卷 53, 编号 16 (2019) |
Nanostructures Technology |
Selective Epitaxy of Submicron GaN Structures |
|
| 卷 53, 编号 16 (2019) |
Nanostructures Technology |
Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam |
|
