| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 2 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride |
|
| Том 51, № 6 (2017) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Study of the distribution profile of iron ions implanted into silicon |
|
| Том 53, № 6 (2019) |
Surfaces, Interfaces, and Thin Films |
Features of Defect Formation in Nanostructured Silicon under Ion Irradiation |
|
| Том 53, № 8 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon |
|
| Том 53, № 12 (2019) |
Carbon Systems |
Modification of Carbon-Nanotube Wettability by Ion Irradiation |
|
