| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 4 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy |
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| Том 50, № 5 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates |
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| Том 50, № 7 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates |
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| Том 50, № 8 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Elastic strains and delocalized optical phonons in AlN/GaN superlattices |
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| Том 51, № 1 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire |
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| Том 51, № 8 (2017) |
Carbon Systems |
Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001) |
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| Том 52, № 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE |
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| Том 52, № 6 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers |
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| Том 52, № 9 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Template Synthesis of Monodisperse Spherical Nanocomposite SiO2/GaN:Eu3+ Particles |
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| Том 52, № 14 (2018) |
Graphene |
High Quality Graphene Grown by Sublimation on 4H-SiC (0001) |
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| Том 53, № 8 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Template Synthesis of Monodisperse Submicrometer Spherical Nanoporous Silicon Particles |
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| Том 53, № 8 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties |
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| Том 53, № 11 (2019) |
Surfaces, Interfaces, and Thin Films |
Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions |
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| Том 53, № 12 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy |
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| Том 53, № 14 (2019) |
Nanostructures Characterization |
Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC |
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