| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 5 (2016) |
Physics of Semiconductor Devices |
GaAs/InGaAsN heterostructures for multi-junction solar cells |
|
| 卷 50, 编号 10 (2016) |
Electronic Properties of Semiconductors |
Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm |
|
| 卷 51, 编号 2 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates |
|
| 卷 52, 编号 3 (2018) |
Electronic Properties of Semiconductors |
Electrical Breakdown in Pure n- and p-Si |
|
| 卷 52, 编号 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy |
|
| 卷 52, 编号 7 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Experimental Study of Spontaneous Emission in Bragg Multiple- Quantum-Well Structures with InAs Single-Layer Quantum Wells |
|
| 卷 52, 编号 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy |
|
| 卷 52, 编号 14 (2018) |
Microcavity and Photonic Crystals |
Experimental Study of Spontaneous Emission in the Bragg Multiple Quantum Wells Structure of InAs Monolayers Embedded in a GaAs Matrix |
|
| 卷 52, 编号 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications |
|
| 卷 52, 编号 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy |
|
| 卷 53, 编号 1 (2019) |
Electronic Properties of Semiconductors |
Influence of a Quantum Magnetic Field on the Heating of Charge Carriers in Pure Germanium |
|
| 卷 53, 编号 1 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology |
|
| 卷 53, 编号 2 (2019) |
Surfaces, Interfaces, and Thin Films |
Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers |
|
| 卷 53, 编号 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates |
|
| 卷 53, 编号 12 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers |
|
| 卷 53, 编号 14 (2019) |
Nanostructures Characterization |
Photoluminescence and Transmission Electron Microscopy Methods for Characterization of Super-Multiperiod A3B5 Quantum Well Structures |
|
