Автор туралы ақпарат

Shek, E. I.

Шығарылым	Бөлім	Атауы	Файл
Том 50, № 2 (2016)	Physics of Semiconductor Devices	Si:Si LEDs with room-temperature dislocation-related luminescence
Том 50, № 2 (2016)	Physics of Semiconductor Devices	Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties
Том 50, № 2 (2016)	Physics of Semiconductor Devices	Electroluminescence properties of LEDs based on electron-irradiated p-Si
Том 51, № 9 (2017)	Electronic Properties of Semiconductors	Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon
Том 53, № 2 (2019)	Electronic Properties of Semiconductors	Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions
Том 53, № 2 (2019)	Spectroscopy, Interaction with Radiation	Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions
Том 53, № 4 (2019)	Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)	Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film