Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions


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Аннотация

The implantation of Czochralski-grown p-type silicon with 1-MeV germanium ions at a dose of 2.5 × 1014 cm–2 does not lead to the amorphization of single-crystal silicon. Under subsequent high-temperature annealing, electrically active acceptor centers are transformed. Their concentration and special distribution depend on the annealing temperature. The possible factors determining how these centers are formed are discussed.

Авторлар туралы

N. Sobolev

Ioffe Institute

Хат алмасуға жауапты Автор.
Email: nick@sobolev.ioffe.rssi.ru
Ресей, St. Petersburg, 194021

O. Aleksandrov

St. Petersburg State Electrotechnical University LETI

Email: nick@sobolev.ioffe.rssi.ru
Ресей, St. Petersburg, 197376

V. Sakharov

Ioffe Institute

Email: nick@sobolev.ioffe.rssi.ru
Ресей, St. Petersburg, 194021

I. Serenkov

Ioffe Institute

Email: nick@sobolev.ioffe.rssi.ru
Ресей, St. Petersburg, 194021

E. Shek

Ioffe Institute

Email: nick@sobolev.ioffe.rssi.ru
Ресей, St. Petersburg, 194021

A. Kalyadin

Ioffe Institute

Email: nick@sobolev.ioffe.rssi.ru
Ресей, St. Petersburg, 194021

E. Parshin

Yaroslavl Branch, Institute of Physics and Technology, Russian Academy of Sciences

Email: nick@sobolev.ioffe.rssi.ru
Ресей, Yaroslavl, 150007

N. Melesov

Yaroslavl Branch, Institute of Physics and Technology, Russian Academy of Sciences

Email: nick@sobolev.ioffe.rssi.ru
Ресей, Yaroslavl, 150007

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