Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions
- Авторлар: Sobolev N.A.1, Aleksandrov O.V.2, Sakharov V.I.1, Serenkov I.T.1, Shek E.I.1, Kalyadin A.E.1, Parshin E.O.3, Melesov N.S.3
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Мекемелер:
- Ioffe Institute
- St. Petersburg State Electrotechnical University LETI
- Yaroslavl Branch, Institute of Physics and Technology, Russian Academy of Sciences
- Шығарылым: Том 53, № 2 (2019)
- Беттер: 153-155
- Бөлім: Electronic Properties of Semiconductors
- URL: https://journal-vniispk.ru/1063-7826/article/view/205657
- DOI: https://doi.org/10.1134/S1063782619020222
- ID: 205657
Дәйексөз келтіру
Аннотация
The implantation of Czochralski-grown p-type silicon with 1-MeV germanium ions at a dose of 2.5 × 1014 cm–2 does not lead to the amorphization of single-crystal silicon. Under subsequent high-temperature annealing, electrically active acceptor centers are transformed. Their concentration and special distribution depend on the annealing temperature. The possible factors determining how these centers are formed are discussed.
Авторлар туралы
N. Sobolev
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: nick@sobolev.ioffe.rssi.ru
Ресей, St. Petersburg, 194021
O. Aleksandrov
St. Petersburg State Electrotechnical University LETI
Email: nick@sobolev.ioffe.rssi.ru
Ресей, St. Petersburg, 197376
V. Sakharov
Ioffe Institute
Email: nick@sobolev.ioffe.rssi.ru
Ресей, St. Petersburg, 194021
I. Serenkov
Ioffe Institute
Email: nick@sobolev.ioffe.rssi.ru
Ресей, St. Petersburg, 194021
E. Shek
Ioffe Institute
Email: nick@sobolev.ioffe.rssi.ru
Ресей, St. Petersburg, 194021
A. Kalyadin
Ioffe Institute
Email: nick@sobolev.ioffe.rssi.ru
Ресей, St. Petersburg, 194021
E. Parshin
Yaroslavl Branch, Institute of Physics and Technology, Russian Academy of Sciences
Email: nick@sobolev.ioffe.rssi.ru
Ресей, Yaroslavl, 150007
N. Melesov
Yaroslavl Branch, Institute of Physics and Technology, Russian Academy of Sciences
Email: nick@sobolev.ioffe.rssi.ru
Ресей, Yaroslavl, 150007
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