| 期 |
栏目 |
标题 |
文件 |
| 卷 51, 编号 1 (2017) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds |
|
| 卷 51, 编号 8 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Effect of ammonium-sulfide solvent on the surface passivation of GaSb (100) |
|
| 卷 53, 编号 7 (2019) |
Surfaces, Interfaces, and Thin Films |
Development of the Physicochemical Properties of the GaSb(100) Surface in Ammonium Sulfide Solutions |
|
| 卷 53, 编号 8 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties |
|
