| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 7 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth |
|
| Том 50, № 7 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy |
|
| Том 51, № 8 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates |
|
| Том 51, № 9 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On the delta-type doping of GaAs-based heterostructures with manganese compounds |
|
| Том 53, № 3 (2019) |
Review |
Discovery of III–V Semiconductors: Physical Properties and Application |
|
| Том 53, № 16 (2019) |
Nanostructures Technology |
The Influence of the Crystal Structure of the GaSb–InAs Matrix on the Formation of InSb Quantum Dots |
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