作者的详细信息
Volochaev, M. N.
| 期 | 栏目 | 标题 | 文件 |
| 卷 52, 编号 5 (2018) | XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology | Effect of Epitaxial Alignment on Electron Transport from Quasi-Two-Dimensional Iron Silicide α-FeSi2 Nanocrystals Into p-Si(001) | |
| 卷 53, 编号 11 (2019) | Surfaces, Interfaces, and Thin Films | Structure and Electrical Properties of (ZnO/SiO2)25 Thin Films | |
| 卷 53, 编号 14 (2019) | Nanostructure Devices | Study of the Photovoltage in Mn/SiO2/n-Si MOS Structure at Cryogenic Temperatures | |
| 卷 53, 编号 14 (2019) | Nanostructure Devices | Magnetoimpedance Effect in a SOI-Based Structure |