Отправить статью по E-mail Magnetoimpedance Effect in a SOI-Based Structure
- Авторы: Smolyakov D.A.1, Tarasov A.S.1, Yakovlev I.A.1,2, Volochaev M.N.1,2
-
Учреждения:
- Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences
- Siberian State University of Science and Technology
- Выпуск: Том 53, № 14 (2019)
- Страницы: 1964-1966
- Раздел: Nanostructure Devices
- URL: https://journal-vniispk.ru/1063-7826/article/view/207541
- DOI: https://doi.org/10.1134/S1063782619140215
- ID: 207541
Цитировать
Открытый доступ
Доступ предоставлен
Только для подписчиков
Аннотация
This paper presents the results of the study the transport properties of the SOI-based structure. Measurements were carried out on an alternating current with an external magnetic field in a wide temperature range. The influence of the magnetic field was found. We associate this effect with the influence on the surface states located at the interface, this appears as a change of the energy of their levels. This effect is enhanced by the nanoscale of the silicon channel.
Ключевые слова
Об авторах
D. Smolyakov
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: sda88@iph.krasn.ru
Россия, Krasnoyarsk, 660036
A. Tarasov
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: taras@iph.krasn.ru
Россия, Krasnoyarsk, 660036
I. Yakovlev
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences; Siberian State University of Science and Technology
Автор, ответственный за переписку.
Email: yia@iph.krasn.ru
Россия, Krasnoyarsk, 660036; Krasnoyarsk, 660014
M. Volochaev
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences; Siberian State University of Science and Technology
Автор, ответственный за переписку.
Email: volochaev91@mail.ru
Россия, Krasnoyarsk, 660036; Krasnoyarsk, 660014
Дополнительные файлы
