| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 10 (2016) |
Physics of Semiconductor Devices |
Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture |
|
| 卷 51, 编号 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors |
|
| 卷 52, 编号 1 (2018) |
Physics of Semiconductor Devices |
Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells |
|
| 卷 52, 编号 1 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Investigation of the Modified Structure of a Quantum Cascade Laser |
|
| 卷 52, 编号 7 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the Fabrication and Study of Lattice-Matched Heterostructures for Quantum Cascade Lasers |
|
| 卷 53, 编号 8 (2019) |
Physics of Semiconductor Devices |
Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers |
|
