作者的详细信息
Melesov, N. S.
| 期 | 栏目 | 标题 | 文件 |
| 卷 53, 编号 2 (2019) | Electronic Properties of Semiconductors | Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions | |
| 卷 53, 编号 2 (2019) | Spectroscopy, Interaction with Radiation | Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions |